Paper
22 January 1997 High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions
Hui Nie, K. Alex Anselm, C. Hu, Ben G. Streetman, Joe C. Campbell
Author Affiliations +
Abstract
The performance of conventional photodiodes is limited by an intrinsic tradeoff between quantum efficiency and bandwidth. We have successfully demonstrated that resonant-cavity photodiodes can simultaneously achieve high quantum efficiency and wide bandwidth. The resonant-cavity approach lengthens the effective absorption thickness through multiple reflections between two parallel mirrors. Previously, it has been shown that resonant-cavity, separate-absorption-and-multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (approximately 75%), low dark current and low bias voltage (less than 15 volts). In this paper, we describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved. Also, low multiplication noise characteristics (0.2 less than k less than 0.3) are reported.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Nie, K. Alex Anselm, C. Hu, Ben G. Streetman, and Joe C. Campbell "High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264252
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Avalanche photodetectors

Absorption

Avalanche photodiodes

Mirrors

Photodiodes

Gallium arsenide

Quantum efficiency

Back to Top