Grazing Angle Collector Contamination

Rigato, Valentino

doi:10.1117/3.769214.ch6b

Book: EUV Lithography

Editor(s): Vivek Bakshi

Author(s): Valentino Rigato

Published: 2008

https://doi.org/10.1117/3.769214.ch6b

Abstract

Optical lithography using deep ultraviolet (DUV) light with a wavelength of 193 nm, together with immersion technology, is extendable down to the 45-nm node. However, using this technology to achieve half-pitch resolutions of 32 nm and below for future generations of even denser devices would require double exposure or double-imaging techniques that would halve wafer production throughput while markedly increasing mask set prices. Extreme ultraviolet lithography (EUVL), with a wavelength of 13.5 nm, is today considered the most viable solution to replace optical lithography for high-volume chip manufacturing at the 32-nm node and below.