AlGaN-based Intersubband Device Technology

Bayram, Can, IBM Research, T.J. Watson Research Center; Sadana, Devendra K., IBM Thomas J. Watson Research Ctr.; Razeghi, Manijeh, Northwestern Univ.

doi:10.1117/3.1002245.ch8

Book: The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications

Editor(s): Leo Esaki; Klaus von Klitzing; Manijeh Razeghi

Author(s): Can Bayram, Devendra Sadana, Manijeh Razeghi

Published: 2013

https://doi.org/10.1117/3.1002245.ch8

Author Affiliations +

Abstract

Gallium nitride (GaN)-based technology has been successfully applied for: (1) high-electron-mobility transistors (HEMTs) that can withstand high critical electric fields (~3.5 MV/cm) and operate at high saturation velocity (3 × 107 cm/s), (2) efficient ultraviolet-visible light-emitting diodes, and, more recently, for (3) advanced near-infrared devices operating in the terahertz regime by utilizing intersubband levels in AlGaN/GaN superlattices (SLs), as described below.