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Near-Infrared Light Detection using CMOS Silicon Avalanche Photodiodes (SiAPDs)
Ehsan Kamrani; Frédéric Lesage; Mohamad Sawan
DOI: 10.1117/3.1002245.ch20
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Excerpt

20.1 Introduction20.2 Background Theory: How SiAPDs Work20.3 Design Challenges of NIR Detectors20.3.1 Modeling and simulation20.3.2 Fabrication: standard and dedicated CMOS process20.3.3 Premature-edge-breakdown (PEB) effects20.3.4 APD structure20.4 SiAPD Circuitry Design20.4.1 Circuitry required for SiAPD-based front ends20.4.2 Linear-mode SiAPD front end20.4.3 Geiger-mode SiAPD front end20.5 Optimally Adaptive Control for Low-Noise, Low-Power, and Fast Photodetection20.6 Conclusion20.6 Conclusion20.6 ConclusionAcknowledgmentReferences

© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)

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