Volume Table of Contents

PROCEEDINGS VOLUME 3333

23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 22-27 FEBRUARY 1998

Advances in Resist Technology and Processing XV

Editor(s): Will Conley

Editor Affiliations +

IN THIS VOLUME

14 Sessions, 142 Papers, 0 Presentations

ArF Materials I (9)

ArF Materials II (6)

ArF Process (5)

DUV Materials (5)

DUV Process (7)

Novolak Materials and Processes (6)

Poster Session: Novolak Materials (20)

Poster Session: DUV Processing (23)

Poster Session: Aspects in Lithography (9)

Poster Session: ArF Materials (9)

Poster Session: Novolak-Based Processing (9)

Poster Session: ArF Processing (12)

Poster Session: DUV Materials (17)

Late-Breaking Developments (5)

23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY

22-27 February 1998

Santa Clara, CA, United States

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ArF Materials I

Polymer design in surface modification resist process for ArF lithography Paper

Takahiro Matsuo, Masayuki Endo, Shigeyasu Mori, Koichi Kuhara, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312340

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Design of cycloolefin-maleic-anhydride resist for ArF lithography Paper

Jae Chang Jung, Cheol-Kyu Bok, Ki-Ho Baik

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312408

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ArF single-layer photoresists based on alkaline-developable ROMP-H resin Paper

Mitsuhito Suwa, Haruo Iwasawa, Toru Kajita, Masafumi Yamamoto, Shin-Ichiro Iwanaga

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312419

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Deblocking reaction of chemically amplified ArF positive resists Paper

Mitsuharu Yamana, Toshiro Itani, Hiroshi Yoshino, Shuichi Hashimoto, Hiroyoshi Tanabe, Kunihiko Kasama

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312429

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Adhesion characteristics of alicyclic polymers for use in ArF excimer laser lithography Paper

Kaichiro Nakano, Shigeyuki Iwasa, Katsumi Maeda, Etsuo Hasegawa

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312438

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Novel strategy for the design of highly transparent ArF resists with excellent dry etch resistance Paper

Wenwei Zhao, Takeshi Ohfuji, Masaru Sasago, Seiichi Tagawa

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312448

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Discrimination enchancement in polysilsesquioxane-based positive resists for ArF lithography Paper

Jun Hatakeyama, M. Nakashima, I. Kaneko, Shigehiro Nagura, Toshinobu Ishihara

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312454

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193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids Paper

Francis M. Houlihan, Janet M. Kometani, Allen G. Timko, Richard S. Hutton, Raymond A. Cirelli, Elsa Reichmanis, Omkaram Nalamasu, Allen H. Gabor, Arturo N. Medina, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312462

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New approach to 193-nm photoresists: polyspironorbornane polymers Paper

Robert P. Meagley, Linus Y. Park, Jean M. J. Frechet

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312471

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ArF Materials II

Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method Paper

Naomi Shida, Takeshi Okino, Koji Asakawa, Tohru Ushirogouchi, Makoto Nakase

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312341

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Design and study of water-soluble positive- and negative-tone imaging materials Paper

Jennifer M. Havard, Dario Pasini, Jean M. J. Frechet, David R. Medeiros, Kyle Patterson, Shintaro Yamada, C. Grant Willson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312351

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Reactive ion etching of 193-nm resist candidates: current platforms and future requirements Paper

Thomas I. Wallow, Phillip J. Brock, Richard A. Di Pietro, Robert D. Allen, Juliann Opitz, Ratnam Sooriyakumaran, Donald C. Hofer, Jeff Meute, Jeff D. Byers, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312362

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Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography Paper

Thomas Steinhaeusler, Allen H. Gabor, Daniela White, Andrew J. Blakeney, David R. Stark, Daniel A. Miller, Georgia K. Rich, Victoria L. Graffenberg, Kim R. Dean

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312373

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Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography Paper

Daniela White, Bernard T. Beauchemin Jr., Andrew J. Blakeney, Thomas Steinhaeusler

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312383

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Lithographic performance of a dry-etch stable methacrylate resist at 193 nm Paper

Ralph R. Dammel, Stanley A. Ficner, Joseph E. Oberlander, Axel Klauck-Jacobs, Munirathna Padmanaban, Dinesh N. Khanna, Dana L. Durham

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312393

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ArF Process

Dual-wavelength photoresist for sub-200-nm lithography Paper

Stefan Hien, Guenther Czech, Wolf-Dieter Domke, Hans Raske, Michael Sebald, Iris Stiebert

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312403

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Progress in 193-nm top-surface imaging process development Paper

John M. Hutchinson, Veena Rao, Guojing Zhang, Adam Richard Pawloski, Carlos A. Fonseca, Janet Chambers, Susan M. Holl, Siddhartha Das, Craig C. Henderson, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312405

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Processing of acrylate-based 193-nm resists: influence of physico-chemical properties Paper

Benedicte P. Mortini, Charles Rosilio, Alain Prola, Patrick Jean Paniez

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312406

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Negative-tone TSI process for 193-nm lithography Paper

Koichi Kuhara, Shigeyasu Mori, Yuko Kaimoto, Taku Morisawa, Takeshi Ohfuji, Masaru Sasago

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312407

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Effect of the dissolution contrast on process margins in 193-nm lithography Paper

Makoto Takahashi, Shinji Kishimura, Takuya Naito, Takeshi Ohfuji, Masaru Sasago

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312409

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DUV Materials

Chemical and lithographic aspects of organic deep-UV BARCs Paper

Munirathna Padmanaban, Wen-Bing Kang, Ken Kimura, Yoshino Nishiwaki, Georg Pawlowski, Hatsuyuki Tanaka

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312410

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Positive bilayer resists for 248- and 193-nm lithography Paper

Ratnam Sooriyakumaran, Gregory M. Wallraff, Carl E. Larson, Debra Fenzel-Alexander, Richard A. Di Pietro, Juliann Opitz, Donald C. Hofer, Douglas C. LaTulip Jr., John P. Simons, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312411

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Deep-ultraviolet antireflective coating with improved conformality, optical density, and etch rate Paper

Douglas J. Guerrero, James D. Meador, Gu Xu, Hitoshi Suzuki, Yasuhisa Sone, Vandana N. Krishnamurthy, James B. Claypool, James E. Lamb III

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312412

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Choice of amines as stabilizers for chemically amplified resist systems Paper

Lawrence Ferreira, Sanjay Malik, Thomas R. Sarubbi, Andrew J. Blakeney, Brian Maxwell

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312413

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Positive- and negative-tone water-processable photoresists: a progress report Paper

Shintaro Yamada, David R. Medeiros, Kyle Patterson, Wei-Lun K. Jen, Timo Rager, Qinghuang Lin, Carlos Lenci, Jeff D. Byers, Jennifer M. Havard, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312414

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DUV Process

Modeling parameter extraction for DNQ-novolak thick film resists Paper

Clifford L. Henderson, Steven A. Scheer, Pavlos C. Tsiartas, Benjamen M. Rathsack, John P. Sagan, Ralph R. Dammel, Andreas Erdmann, C. Grant Willson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312415

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Probabilistic model for the mechanism of phenolic polymer dissolution Paper

Lewis W. Flanagin, Christopher L. McAdams, Pavlos C. Tsiartas, Clifford L. Henderson, William D. Hinsberg, C. Grant Willson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312416

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Extension of 248-nm optical lithography: a thin film imaging approach Paper

Qinghuang Lin, Ahmad D. Katnani, Timothy A. Brunner, Charlotte DeWan, Cindy Fairchok, Douglas C. LaTulipe, John P. Simons, Karen E. Petrillo, Katherina Babich, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312417

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Study of bake mechanisms by real-time in-situ ellipsometry Paper

Patrick Jean Paniez, Aime Vareille, Patrice Ballet, Benedicte P. Mortini

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312418

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Can sub-0.18-μm FEOL be realized in production with KrF DUV? Paper

Wendy F.J. Gehoel-van Ansem, Peter Zandbergen, Jos de Klerk

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312420

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Resist edge roughness with reducing pattern size Paper

Eishi Shiobara, Daisuke Kawamura, Kentaro Matsunaga, Toru Koike, Shoji Mimotogi, Tsukasa Azuma, Yasunobu Onishi

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312421

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Inorganic bottom ARC SiOxNy for interconnection levels on 0.18-μm technology Paper

Yorick Trouiller, N. Buffet, Thierry Mourier, Yveline Gobil, Patrick Schiavone, Yves Quere

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312422

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Novolak Materials and Processes

Novel antireflective structure for metal layer patterning Paper

Sang-Soo Choi, Han Sun Cha, Jong-Soo Kim, Jong Mun Park, Dohoon Kim, Kag Hyeon Lee, Jin-Ho Ahn, Hai Bin Chung, Bo Woo Kim

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312423

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Advance of resist profile control in multilayer resist process for sub-150-nm lithography Paper

Yasuki Kimura, Hiroyuki Endo, Akihiro Endo

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312424

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Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists Paper

Will Conley, Carl P. Babcock, Nigel R. Farrar, Hua-Yu Liu, Bill Peterson, Kazuo Taira

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312425

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Application of plasma-polymerized methylsilane for 0.18-μm photolithography Paper

Cedric Monget, Carol Y. Lee, Olivier P. Joubert, Gilles R. Amblard, Timothy W. Weidman, Dian Sugiarto, John W. Yang, F. Cormont, R. L. Inglebert

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312426

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Poster Session: Novolak Materials

Effect of resin molecular weight on novolak dissolution Paper

Hsiao-Yi Shih, Huifang Zhuang, Arnost Reiser, Paula M. Gallagher-Wetmore

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312427

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Novolak Materials and Processes

Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group Paper

Katsuji Douki, Toru Kajita, Shin-Ichiro Iwanaga

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312428

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Poster Session: DUV Processing

Control of acidity of the substrate for precise pattern fabrication using a chemically amplified resist Paper

Isao Satou, Sachiko Yabe, Minoru Watanabe, Takashi Taguchi

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312430

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Poster Session: Novolak Materials

Effects of a visualization dye in a thick film photoresist Paper

Kathryn H. Jensen, Stanley A. Ficner

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312431

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Poster Session: DUV Processing

New development model: aggregate extraction development Paper

Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312432

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Proximity bias swing: origin and characterization Paper

Peter Zandbergen, Wendy F.J. Gehoel-van Ansem, Jos de Klerk, Geert Vandenberghe, Frank T.G.M. Linskens

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312433

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Isolated to dense linewidth offsets, also known as proximity bias, can consume a significant portion of the CD budget. As a result, it has received great attention over the recent years. It is demonstrated that proximity bias shows a cyclic swing behavior on reflective substrates with respect to resist thickness variations. The amplitude of proximity bias swing was found to be influenced by coherence, substrate reflectivity, feature dimension and pitch. Proximity bias swing is caused by differences in optical path lengths of light passing through the resist film. Due to different diffraction angles for different pitches, the incoupling positions for different pitches vary. The offset in CD swing incoupling positions for different pitches results in proximity bias swing. At low coherence however, an averaging effect on diffraction angles from different pitches takes place due to the wide range of angles of light passing through the mask. In addition, the impact of exposure margin variations on resolution and proximity bias was demonstrated. Low exposure margins offer high resolution. As a consequence, high proximity bias is observed. Furthermore, different line to space ratios were studied to identify the transition point between dense and isolated features with respect to proximity bias swing. At high coherence ((sigma) equals 0.35) it was observed that for 0.25 micrometers features with pitches smaller than 0.65 micrometers , proximity bias swing is larger than the +/- 0.5% CD budget, which makes it impossible to do effective application of proximity bias correction schemes. At low coherence, only limited proximity bias swing was found. Through variation of bake conditions it was demonstrated that these process variations had no measurable effect on proximity bias swing. Optical settings, in combination with substrate reflectivity, are the main contributors to (eliminate) proximity bias swing.

Poster Session: Aspects in Lithography

Resist deposition without spinning by using novel inkjet technology and direct lithography for MEMS Paper

Gokhan Percin, Tom Hyongsok Soh, Butrus T. Khuri-Yakub

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312434

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Poster Session: ArF Materials

Novel ArF photoresist system using acrylic polymer Paper

Bang-Chein Ho, Jui-Fa Chang, Ting-Chung Liu, Jian-Hong Chen

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312435

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Poster Session: Aspects in Lithography

Techniques for the analysis of Cl^- ion in TMAH Paper

Bang-Chein Ho, Mong-Ling Chang, Yu-Ping Lin

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312436

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Poster Session: Novolak-Based Processing

Image reversal at nanometer scales Paper

Saleem H. Zaidi, Xiaolan Chen, Steven R. J. Brueck

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312437

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Poster Session: ArF Processing

Improved positive surface modification resist process for 193-nm lithography Paper

Masayuki Endo, Takahiro Matsuo, Shigeyasu Mori, Taku Morisawa, Koichi Kuhara, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312439

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Novolak Materials and Processes

New design principle for the PACs of novolak resists Paper

Salil Jha, Arnost Reiser

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312440

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Poster Session: DUV Processing

Examination of develop puddle time and its effects on lithographic performance Paper

Mark S. Markowski

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312441

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Application of a bilayer silylated resist process in volume production Paper

Robert Franzen, Andreas Grassmann, Markus Kirschinger, Thorsten Schedel, Harald Wiedenhofer, Markus Witte

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312442

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Poster Session: Novolak-Based Processing

Contrast enhancement by alkali-decomposable additives in quinonediazide-type positive resists Paper

Yasunori Uetani, Jun Tomioka, Hiroshi Moriuma, Yoshiko Miya

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312443

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Poster Session: Aspects in Lithography

Chemistry of photoresist reclamation Paper

Hideki Nishida, Yoriko Nagao, Akihiko Igawa

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312444

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Poster Session: ArF Processing

Standard developer available ArF resist and performance Paper

Yasunori Uetani, Hiroaki Fujishima, Yoshiko Miya, Ichiki Takemoto

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312445

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Poster Session: Novolak Materials

Resin fractionation effect for photoresist performance Paper

Tatsuya Yamada, Yutaka Saito, Kunio Itoh

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312446

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Poster Session: DUV Processing

Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography Paper

Masafumi Asano, Yumiko Maruyama, Toru Koike, Kenji Chiba, Eishi Shiobara, Takahiro Ikeda

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312447

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Poster Session: ArF Materials

Novel single-layer photoresist containing cycloolefins for 193 nm Paper

Joo Hyeon Park, Dong-Chul Seo, Ki-Dae Kim, Sun-Yi Park, Seong-Ju Kim, Hosull Lee, Jae Chang Jung, Cheol-Kyu Bok, Ki-Ho Baik

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312449

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Poster Session: Novolak Materials

Novolak resin analogs for resist applications Paper

Stan F. Wanat, Kathryn H. Jensen, Ping-Hung Lu, Douglas S. McKenzie

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312450

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Novel novolak block copolymers for advanced i-line resists Paper

Stan F. Wanat, M. Dalil Rahman, Sunit S. Dixit, Ping-Hung Lu, Douglas S. McKenzie, Michelle M. Cook

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312451

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Poster Session: Novolak-Based Processing

Optimization and characterization of ultrathick photoresist films Paper

Warren W. Flack, Warren P. Fan, Sylvia White

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312452

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There are in increasing number of advanced lithographic technologies that require photoresist film thickness in excess of twenty microns. For example, suppliers of microprocessors are migrating to flip chip packaging because of bond pad limitations. The flip chip application can require photoresist materials as thick as 125 micrometers for the bump-bonding step. Another application that requires ultra- thick photoresist films is micromachining. Extremely large structure heights are frequently required for micro- electrodeposition of the mechanical components such as coils, cantilevers and valves. These applications can require photoresist in excess of a hundred microns thickness. The patterning of high aspect ratio structures in these ultra-thick photoresist films is extremely challenging. The aspect ratios easily exceed those encountered in submicron lithography for standard integrated circuit (IC) manufacturing. In addition, the specific photoresist optical properties and develop characteristics degrade the critical dimension control for these ultra-thick films. The bulk absorption effect of the photoresist reduces the effective dose at the bottom of the film. This effect is exacerbated by the isotropic wet development process which produces sloped profiles. Unlike thin photoresist for IC manufacturing, lithography modeling and characterization are not readily available for ultra-thick photoresist films. The performance of several commercially available positive and negative ultra-thick photoresists is examined over a thickness range of 20 to 100 micrometers . This paper is primarily focused on the 25 micrometers film thickness using both high throughput i-line and gh-line lithography systems optimized for thick film processing. The various photoresists used in this study were selected to represent the full range of available chemistries from multiple suppliers. Basic photoresist characterization techniques for thin films are applied to the ultra-thick photoresist films. The cross sectional SEM analysis and Bossung plots were used to establish relative lithographic capabilities of each photoresist. The trade-offs between the various photoresist chemistries is reviewed and compared with the process requirements for the various applications. A future paper will discus the capabilities of these same photoresists at both 50 and 100 micrometers film thicknesses.

Poster Session: DUV Materials

Material design and lithographic performance of novel hydroxystyrene-copolymer-based DUV negative resists Paper

Takanori Kudo, Kayo Aramaki, Seiya Masuda, Georg Pawlowski

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312453

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Poster Session: DUV Processing

Analysis of resist pattern collapse and optimization of DUV process for patterning sub-0.20-μm gate line Paper

Jeong Yun Yu, Goo-Min Jeong, Hoon Huh, Jaejeong Kim, Sang-Pyo Kim, Jae-Keun Jeong, Hong-Seok Kim

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312455

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Poster Session: Novolak Materials

Method to measure ethylene oxide/propylene oxide surfactants in resist developers Paper

Rodica Holt, Joseph E. Oberlander, Maria Fides Y. Calindas, Eleazar Gonzalez, Pilarcita L. Ranque

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312456

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Synthesis of diazonaphthoquinone (DNQ) photoactive compounds (PACs) using ion exchange resins Paper

Joseph E. Oberlander, Eleazar Gonzalez

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312457

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Poster Session: ArF Processing

Tailoring of isolation structures with top-surface imaging process by silylation Paper

Hyoung-Gi Kim, Myoung-Soo Kim, Cheol-Kyu Bok, Byung-Jun Park, Jin-Woong Kim, Ki-Ho Baik, Dai-Hoon Lee

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312458

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Poster Session: DUV Materials

Compatibility of chemically amplified photoresists with bottom antireflective coatings Paper

Hiroshi Yoshino, Toshiro Itani, Shuichi Hashimoto, Mitsuharu Yamana, Tsuyoshi Yoshii, Hiroyoshi Tanabe

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312459

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The effects of acid structures and blocking groups in chemically amplified resists on compatibility with bottom anti-reflective coatings (BARCs), were investigated. The resists consisted of tert-butoxy carbonyl (t-BOC) or acetal blocked polyhydroxystyrene with three types of photoacid generators (PAGs) which generate trifluoromethanesulfonic acid (acid 1), 2,4-dimethyl benzensulfonic acid (acid 2) and cyclohexanesulfonic acid (acid 3). Three types of commercially available BARCs, Brewer Science CD9, DUV11 and DUV18 were used for this study. CD9 was decomposed by exposure and generated an acid substance, which induced the necking at the bottom of the resist films. In the case of DUV11, the generated acid from the PAG was neutralized, and footing was observed in t-BOC type resists. Acetal type resists had no footing on DUV11 because the deblocking reaction progressed without post-exposure baking. DUV18 had good compatibility with most of the resist materials because of its neutral acidity. From the viewpoint of resist materials, it was found that the acetal type resists tended to have necking, because the deblocking reaction occurred at lower acid concentration compared with t-BOC type resists. Moreover, the tendency to have a necking profile, in increasing order, was acid 3 > acid 2 > acid 1. This order corresponded with the reverse order of the efficiency of the deblocking reaction. A weak acid might be greatly affected by some substance diffused from a BARC. The acetal type resist with acid 1 had excellent compatibility with various BARCs. However, the resolution capability of the acetal type resist with acid 1 was lower than that of the acetal type resist with acid 3, because the acid diffusion length of acid 1 was larger than that of acid 3. It was concluded that good compatibility of the resist with the BARC is achieved by the high deblocking reaction efficiency and moderate diffusion length of acid in acetal type resists.

Late-Breaking Developments

Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography Paper

Shigeyuki Iwasa, Kaichiro Nakano, Katsumi Maeda, Etsuo Hasegawa

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312460

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Poster Session: DUV Processing

Lithographic evaluation of deep-UV photoresists for 0.25- and 0.18-μm technology design rules Paper

Gilles R. Amblard

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312461

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Poster Session: DUV Materials

Minimizing photoresist dispense volumes on organic antireflective layers: the effects of chemistry and coating methodology on defect size and density Paper

Andrew E. Bair, Audrey M. Davis, Bradley D. Lantz, Jeffrey R. Johnson, Charles R. Spinner III, Steve Tanner, Von Jerick T. Marcos, Hiroshi Matsui

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312463

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Poster Session: ArF Processing

Influence of salting-out effect in ArF resist development Paper

Yasuhiro Yoshida, Teruhiko Kumada, Atsuko Sasahara, Atsushi Oshida, Hiroshi Adachi

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312464

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Poster Session: Aspects in Lithography

Sensitivity and image quality of resists with electron-beam, ion-beam, and optical exposure Paper

Nicholas N. Rau, Andrew R. Neureuther, Taro Ogawa, Randall L. Kubena, Fred P. Stratton, Charles H. Fields, C. Grant Willson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312465

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Poster Session: DUV Materials

Recent advances in increasing the thermal flow resistance of acetal-derivatized polyhydroxystyrene deep-UV matrix resins Paper

Janet M. Kometani, Francis M. Houlihan, Allen G. Timko, Omkaram Nalamasu, Elsa Reichmanis, Sharon A. Heffner, Mary E. Galvin-Donoghue

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312466

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Photoacid generation in chemically amplified resists: elucidation of structural effects of photoacid generators using new acid-sensitive dyes for monitoring acid generation Paper

James F. Cameron, J. Michael Mori, Thomas M. Zydowsky, Doris Kang, Roger F. Sinta, Matthew King, Juan C. Scaiano, Gerd Pohlers, Susan Virdee, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312467

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Development of DUV resist formulations with excellent performance on metal substrates Paper

Martha M. Rajaratnam, James F. Cameron, Jacque H. Georger Jr., Doris Kang, Gregory P. Prokopowicz, Roger F. Sinta, James W. Thackeray

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312468

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Poster Session: ArF Processing

Lithographic characteristics of 193-nm resists imaged at 193 and 248 nm Paper

Juliann Opitz, Robert D. Allen, Thomas I. Wallow, Gregory M. Wallraff, Donald C. Hofer

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312469

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New approaches to production-worthy 193-nm photoresists based on acrylic copolymers Paper

Thomas I. Wallow, Robert D. Allen, Juliann Opitz, Richard A. Di Pietro, Phillip J. Brock, Ratnam Sooriyakumaran, Donald C. Hofer

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312470

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Poster Session: ArF Materials

Design of an etch-resistant cyclic olefin photoresist Paper

Robert D. Allen, Juliann Opitz, Thomas I. Wallow, Richard A. Di Pietro, Donald C. Hofer, Saikumar Jayaraman, Karen A. Hullihan, Larry F. Rhodes, Brian L. Goodall, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312472

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Poster Session: DUV Processing

Etch integration issues in the development of deep submicron contacts utilizing DUV resist and organic BARC Paper

Viswanathan Ramanathan, Shixiong Chen, Kafai Lai, Maureen R. Brongo, Nandasiri Samarakone

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312473

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Poster Session: Novolak Materials

Acid diffusion in a chemically amplified negative i-line photoresist Paper

Judy Connolly, K. Rex Chen, Ranee W. Kwong, Margaret C. Lawson, Leo L. Linehan, Wayne M. Moreau

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312474

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Photoresist ultrafiltration optimization Paper

George M. Jordhamo, Ian Melville, Ann Marie Mewherter

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312475

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Advanced semiconductor devices can suffer from a plethora ofdefects, some of which are attributable to the processes used for their manufacture and others which are inherent to the materials used to fabricate the device. As the level of integration in these devices continues to become more sophisticated, so too must the detection techniques and ultimately the control of such defects. One possible method to reduce defects is to monitor and control the purity of chemicals utilized to fabricate advanced devices. This paper will specifically deal with one such chemical, photoresist. The manufacture ofphotoresist chemicals has advanced significantly over the past 5-10 years. The once relatively crude "refmery-like" resist production facilities have been replaced with ultraclean facilities which are constructed and operated in a similar manner as advanced device fabs today. The driving force behind this transformation is to increase wafer yield by limiting defects on product wafers which are caused by particulate contamination in the resist material. Specific particles come in many flavors such as inactive dirt or dust particles to active metallic impurities containing elements such as sodium, calcium or iron. Likewise, there are many new techniques utilized to control specific particulates (e.g. ion exchange for metallic impurities). However, in general, to remove generic particulate contamination, filtration or ultrafiltration has been the mechanism of choice for many years and will probably continue to be so in the foreseeable future. In order to continually improve the efficiency ofthe filtration process, the ability to evaluate new filtration materials and techniques must be acquired. In addition, developing models which allow scaling from pilot systems to large production systems without repeating process optimization is critical in order to deliver leading edge products t the market quickly and efficiently. This study was primarily concerned with developing a technique to evaluate filter systems in an efficient manner. In addition to generating empirical data, mathematical models were utilized to understand the filtration process and to use for future scale up purposes. Additionally, new or improved filtration devices must be studied to determine the effects on the photoresist chemical using advanced analytical techniques. It is with the above information that the photoresist manufacturer will be able to continually drive particulate contamination levels lower and lower in the future.

Optimization of optical parameters for a critical i-line resist system Paper

Rosemary Bell

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312476

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Poster Session: DUV Processing

Effect of processing on surface roughness for a negative-tone chemically amplified resist exposed by x-ray lithography Paper

Geoffrey W. Reynolds, James Welch Taylor

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312477

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As critical dimensions for devices continue to shrink, there is concern over the possible resist sidewall contributions to the critical dimension error budget. Because top surface roughness is substantially easier to measure than the sidewall roughness, it is the purpose of this paper to correlate top surface and sidewall roughness to the processing parameters of dose and development conditions that effect the overall roughness and to explore some possible reasons for the differences in the top surface and sidewall roughness. Initial atomic force microscopy results on the resist top surface indicate that there is a general correlation between the top surface roughness and the processing conditions of dose and development. The sidewall roughness results, however, indicate that the sidewall roughness is relatively independent of the dose and development conditions for the negative-tone, chemically- amplified resist, Shipley SAL 605. The root mean square roughness (R_rms) for the resist sidewalls was on the order of 5.2 +/- 0.5 nm for X-ray exposure. The top surface roughness for the resist at optimized lithographic conditions of 80 mJ/cm² developed with 0.254 N tetramethylammonium hydroxide was 7.2 +/- 1 nm. These studies, looking at the effects of dose, have shown that increasing the dose decreases the top surface roughness. The extent of the linking reaction, as measured by FTIR, has been compared to the roughness of the resist for samples that have the same approximate linking but have had radically different dose and thermal histories. These preliminary results indicate that there is a general correlation between the extent of linking and the roughness. Samples exposed to a very high dose (650 mJ/cm²) but subjected to short post-exposure bake times (4.1 sec at 108 degree(s)) show similar roughness to samples exposed with lower doses (150 mJ/cm²) but longer PEB times (40 sec at 108 degree(s)). The development conditions provide another major contributing factor in the top surface roughness. Decreasing the developer concentration decreases the top surface roughness of the resist. Adding particular quaternary ammonium salts to the developer decreases the surface roughness and slows the dissolution rate. The goal of these efforts with developer additives was to find the appropriate processing conditions that would yield surface roughness below 3 nm for 100 nm lines. This paper will also explore possible explanations for the effect of developer conditions on the observed roughness in light of current dissolution theories.

Poster Session: DUV Materials

Structural basis for high thermal stability of a resist Paper

Sanjay Malik, Andrew J. Blakeney, Lawrence Ferreira, Medhat A. Toukhy, John E. Ferri

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312478

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Poster Session: DUV Processing

Real-time amine monitoring and its correlation to critical dimension control of chemically amplified resists for sub-0.25-μm geometries Paper

Will Conley, Carl P. Babcock, John A. Lilygren, Clifford P. Sandstrom, Nigel R. Farrar, John Piatt, Devon A. Kinkead, William Goodwin, Oleg P. Kishkovich, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312479

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Process and performance optimization of bottom antireflective coatings Paper

Shuji Ding, Ping-Hung Lu, Jianhui Shan, Eleazar Gonzalez, Salem Mehtsun, Sunit S. Dixit, Dinesh N. Khanna

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312480

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Poster Session: DUV Materials

Monitoring and controlling synthesis of bottom antireflective coating materials by in-situ FT-IR technique Paper

Shuji Ding, Jianhui Shan, Dinesh N. Khanna

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312481

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Poster Session: DUV Processing

Deposition of trace metals to a wafer surface from lithography materials Paper

Rob W. Ramage, Rita Vos, Marc Meuris, Marcel Lux

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312342

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Poster Session: ArF Materials

Resist cluster formation model and development simulation Paper

Kazuya Kamon, Keisuke Nakazawa, Atsuko Yamaguchi, Nobuyuki N. Matsuzawa, Takeshi Ohfuji, Masaru Sasago, Ken ichi Kanzaki, Seiichi Tagawa

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312343

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Poster Session: Novolak-Based Processing

Taguchi method applied in optimization of Shipley SJR 5740 positive resist deposition Paper

Allan P. Hui, Julian O. Blosiu, Dean V. Wiberg

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312344

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Poster Session: Novolak Materials

Dissolution of phenolic polymers in aqueous base: the influence of polymer structure Paper

Christopher L. McAdams, Lewis W. Flanagin, Clifford L. Henderson, Adam R. Pawlowski, Pavlos C. Tsiartas, C. Grant Willson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312345

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Effects of structural differences in speed enhancers (dissolution promoters) on positive photoresist composition Paper

Michelle M. Cook, M. Dalil Rahman, Ping-Hung Lu

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312346

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Novolak resin for ultrafast high-resolution positive i-line photoresist compositions Paper

M. Dalil Rahman, Ping-Hung Lu, Michelle M. Cook, Woo-Kyu Kim, Dinesh N. Khanna

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312347

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Poster Session: DUV Materials

Effects of underlayer on performance of bilayer resists for 248-nm lithography Paper

Katherina Babich, Alessandro Callegari, Karen E. Petrillo, John P. Simons, Douglas C. LaTulipe, Marie Angelopoulos, Qinghuang Lin

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312348

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Poster Session: Novolak Materials

Some aspects of thick film resist performance and modeling Paper

Andreas Erdmann, Clifford L. Henderson, C. Grant Willson, Ralph R. Dammel

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312349

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Poster Session: DUV Materials

Photoacid generators in chemically amplified resists Paper

Yasuhiro Suzuki, Donald W. Johnson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312350

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Poster Session: DUV Processing

High-performance profiles and characteristics of chemically amplified resist Paper

Hideaki Mochizuki, Hiroshi Tomiyasu, Yasuhiro Kameyama, Michinori Tsukamoto, Takaaki Niinomi, Yuki Tanaka, Jun Fujita, Tameichi Ochiai

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312352

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Poster Session: Novolak-Based Processing

Lithographic evaluation of a new high-performance photoresist composition Paper

Warren Montgomery, Neal P. Callan, Alan E. Kozlowski

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312353

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Poster Session: DUV Processing

Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates Paper

Lori Anne Joesten, Matthew L. Moynihan, Tracy K. Lindsay, Michael T. Reilly, Kathy Konjuh, David Mordo, Kenneth P. MacWilliams, Srini Sundararajan

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312354

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Poster Session: Novolak-Based Processing

Characterization of low-viscosity photoresist coating Paper

Murthy S. Krishna, John W. Lewellen, Gary E. Flores

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312355

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Late-Breaking Developments

Improving the performance of 193-nm photoresists based on alicyclic polymers Paper

Kyle Patterson, Uzodinma Okoroanyanwu, Tsutomu Shimokawa, Sungseo Cho, Jeff D. Byers, C. Grant Willson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312356

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Poster Session: DUV Materials

Monitoring photoacid generation in chemically amplified resist systems Paper

Uzodinma Okoroanyanwu, Jeff D. Byers, Ti Cao, Stephen E. Webber, C. Grant Willson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312357

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Advanced negative resists using novel aminoplast crosslinkers Paper

Ali Afzali-Kushaa, Jeffrey D. Gelorme, Laura L. Kosbar, Mark O. Neisser, W. Brunswold, Christopher Feild, Margaret C. Lawson, Pushkara Rao Varanasi

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312358

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Poster Session: ArF Processing

High-silicon-concentration TSI process for 193-nm lithography Paper

Shigeyasu Mori, Taku Morisawa, Nobuyuki N. Matsuzawa, Yuko Kaimoto, Masayuki Endo, Takahiro Matsuo, Koichi Kuhara, Takeshi Ohfuji, Masaru Sasago

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312359

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Poster Session: ArF Materials

Recent advantages of bilevel resists based on silsesquioxane for ArF lithography Paper

Taku Morisawa, Nobuyuki N. Matsuzawa, Shigeyasu Mori, Yuko Kaimoto, Masayuki Endo, Takeshi Ohfuji, Koichi Kuhara, Masaru Sasago

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312360

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Theoretical calculations of silylation reaction of photoresists Paper

Nobuyuki N. Matsuzawa, Shigeyasu Mori, Taku Morisawa, Yuko Kaimoto, Masayuki Endo, Takeshi Ohfuji, Koichi Kuhara, Masaru Sasago

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312361

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Poster Session: ArF Processing

Dry etching resistance of methacrylate polymers for ArF excimer laser lithography Paper

Takeshi Ohfuji, Masayuki Endo, Makoto Takahashi, Takuya Naito, Tetsuya Tatsumi, Koichi Kuhara, Masaru Sasago

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312363

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Poster Session: ArF Materials

Negative-type chemically amplified resists for ArF excimer laser lithography Paper

Takuya Naito, Makoto Takahashi, Takeshi Ohfuji, Masaru Sasago

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312364

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Poster Session: ArF Processing

Dissolution-rate analysis of ArF resist polymers based on the percolation model Paper

Atsuko Yamaguchi, Shinji Kishimura, Nobuyuki N. Matsuzawa, Takeshi Ohfuji, Tomoaki Tanaka, Seiichi Tagawa, Masaru Sasago

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312365

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Rapid simulation of silylation and the role of physical mechanisms in profile shapes Paper

Marco Antonio Zuniga, Ebo H. Croffie, Andrew R. Neureuther

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312366

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Poster Session: Novolak-Based Processing

Photoresist performance evaluation of implant resist systems Paper

David C. Pritchard, Warren Montgomery, James P. Kimball, Jeff A. Albelo

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312367

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Poster Session: DUV Processing

Advanced ARCH resist Paper

N. R. Bantu, J. Marshall, T. Holt, D. Perry, D. Khan

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312368

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Lithographic performance of recent DUV photoresists Paper

Bob Streefkerk, Koen van Ingen Schenau, Corine Buijk

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312369

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Top surface imaging through silylation Paper

Sergei V. Postnikov, Mark H. Somervell, Clifford L. Henderson, Steven Katz, C. Grant Willson, Jeff D. Byers, Anwei Qin, Qinghuang Lin

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312370

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Poster Session: Novolak Materials

Chemically amplified resist technology for i-line applications Paper

Medhat A. Toukhy, Sanjay Malik, Andrew J. Blakeney, Karin R. Schlicht

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312371

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Poster Session: Aspects in Lithography

Cleaning techniques for low-K dielectric materials for advanced interconnects Paper

Didier Louis, Emile Lajoinie, Douglas Holmes, Shihying Lee, Catherine Peyne

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312372

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Poster Session: Novolak Materials

New model for the effect of developer temperature on photoresist dissolution Paper

Chris A. Mack, Mark John Maslow, Atsushi Sekiguchi, Ronald A. Carpio

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312374

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Poster Session: DUV Processing

Lithographic and chemical contrast of single-component top-surface imaging (TSI) resists Paper

John F. Bohland, Janet Chambers, Siddhartha Das, Theodore H. Fedynyshyn, Susan M. Holl, John M. Hutchinson, Veena Rao, Roger F. Sinta

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312375

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Poster Session: Novolak Materials

Advanced complementary color filter technology without dyeing process for CCD image sensors Paper

Hiromitsu Aoki, Kenji Yokozawa, Nobuyuki Waga, Tomoko Ohtagaki, Yoshiaki Nishi, Hirotatsu Kodama, Yoshikazu Sano, Sumio Terakawa

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312376

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Effect of end group on novolak resin properties Paper

Anthony Zampini, Michael J. Monaghan, Cheng-Bai Xu, William J. Cardin

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312377

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New method of determination of the photoresist Dill parameters using reflectivity measurements Paper

Patrick Schiavone, Stephane Bach

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312378

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Poster Session: DUV Materials

Conductive bilevel resist system based on polysilphenylenesiloxane and polyaniline for nanometer lithography Paper

Keiji Watanabe, Miwa Igarashi, Ei Yano

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312379

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Poster Session: Aspects in Lithography

Negative pattern fabrication using laser exposure of positive photoresist Paper

Boris Kobrin, Colleen Hagen

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312380

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Poster Session: ArF Materials

Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists Paper

Pushkara Rao Varanasi, Kathleen M. Cornett, Ahmad D. Katnani

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312381

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Poster Session: DUV Materials

Photoresists using tetrahydropyranyl- and tetrahydrofuranyl-protected styrene maleic anhydride half-ester polymers Paper

Wu-Song Huang, Ratnam Sooriyakumaran, Ranee W. Kwong, Ahmad D. Katnani

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312382

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Poster Session: Aspects in Lithography

Monitoring of lithography modules using defect density inspection systems Paper

Dieter Gscheidlen, Elke Hietschold, Eyal Duzi, Erez Ravid

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312384

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Poster Session: Novolak Materials

Polymer-bound sensitizer in i-line resist formulations Paper

Premlatha Jagannathan, Charlotte DeWan, Andrew R. Eckert, Rebecca D. Mih, Kathleen Martinek, Charles Richwine, Leo L. Linehan, Wayne M. Moreau, Randolph S. Smith

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312385

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Poster Session: DUV Materials

New dry-developable chemically amplified photoresist Paper

Jin-Baek Kim, Hyun-Woo Kim

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312386

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Poster Session: DUV Processing

Novel approach to surface imaging Paper

Mark A. Spak, Fred Mohr, Ronald Bradbury, Ralph R. Dammel, Jason W. Weigold, Stella W. Pang

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312387

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Poster Session: Novolak-Based Processing

Optimizing image transfer into AZ BARLi bottom coat for submicron i-line lithography Paper

Alberto Caligiore, Marco Valtolina, Alberto Cipolli, Arialdo Monguzzi, Fred Mohr, Mark A. Spak, Ralph R. Dammel

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312388

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Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization Paper

Jaclyn J. Yu, Catherine C. Meister, Gerald Vizvary, Cheng-Bai Xu, Patricia Fallon

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312389

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Poster Session: DUV Processing

Resist residue generated on TiN topographic substrates in positive chemically amplified resists Paper

Hajime Wada, Akihiro Usujima, Yuichiro Yanagishita, Kenji Nakagawa

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312390

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Photoresist and the photoresist/wafer interface with a local thermal probe Paper

David S. Fryer, Juan J. de Pablo, Paul F. Nealey

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312391

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Poster Session: ArF Processing

Feasibility of a CVD-resist-based lithography process at 193-nm wavelength Paper

Carol Y. Lee, Siddhartha Das, John W. Yang, Timothy W. Weidman, Dian Sugiarto, Michael P. Nault, David Mui, Zoe A. Osborne

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312392

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Poster Session: DUV Processing

Process effects resulting from conversion to a safe-solvent organic BARC Paper

James C. Cox, Lynn Welsh, Deborah Murphy, Ronald J. Eakin, Pierre Silvestre, Ralph R. Dammel, Shuji Ding, Brad Williams, Dinesh N. Khanna

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312394

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Poster Session: ArF Processing

Line-edge roughness in sub-0.18-μm resist patterns Paper

Susan C. Palmateer, Susan G. Cann, Jane E. Curtin, Scott P. Doran, Lynn M. Eriksen, Anthony R. Forte, Roderick R. Kunz, Theodore M. Lyszczarz, Margaret B. Stern, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312395

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Poster Session: Aspects in Lithography

Computational and experimental study of spin coater air flow Paper

Xiaoguang Zhu, Faqiu Liang, A. Haji-Sheikh, N. Ghariban

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312396

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Poster Session: DUV Materials

Diffusion of photoacid generators by laser scanning confocal microscopy Paper

Ping Zhang, Stephen E. Webber, J. Mendenhall, Jeff D. Byers, Keith K. Chao

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312397

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Diffusion of the photogenerated acid during the period of time between exposure and development can cause contrast loss and ultimately loss of the latent image. This is especially relevant for chemically amplified photoresists that require a post-exposure baking step, which in turn facilitates acid diffusion due to the high temperature normally employed. It is thus important to develop techniques with good spatial resolution to monitor the photogeneration of acid. More precisely, we need techniques that provide two distinct types of information: spatial resolution on various length scales within the surface layer and also sufficient depth resolution so that one can observe the transition from very surface layer to bulk structure in the polymer blend coated on silicon substrate. Herein laser scanning confocal microscopy is used to evaluate the resist for the first time. We report the use of the confocal microscopy to map the pag/dye distribution in PHS matrices, with both reflectance images and fluorescence images. A laser beam is focused onto a small 3D volume element, termed a voxel. It is typically 200 nm X 200 nm laterally and 800 nm axially. The illuminated voxel is viewed such that only signals emanating from this voxel are detected, i.e., signal from outside the probed voxel is not detected. By adjusting the vertical position of the laser focal point, the voxel can be moved to the designated lateral plane to produce an image. Contrast caused by topology difference between the exposed and unexposed area can be eliminated. Bis-p-butylphenyl iodonium triflat (7% of polyhydroxystyrene) is used as photoacid generators. 5% - 18% (by weight, PHS Mn equals 13 k) resist in PGMEA solution is spin cast onto the treated quartz disk with thickness of 1.4 micrometers , 5 micrometers space/10 micrometers pitch chrome mask is used to generate the pattern with mercury DUV illumination. Fluoresceinamine, the pH-sensitive dye, is also used to enhance the contrast of fluorescence image. The typical PEB temperature is 90 degree(s)C for 90 seconds. 488 nm is used as the excitation wavelength. Both reflectance and fluorescence images (> 510 nm) are processed by using Adobe Photoshop. It was found that the reflectance is more sensitive to the change of the refractive index of the resist while the fluorescence is more sensitive to the distribution of the PAG/dye. The NIH Image software is used for acid exchange rate calculation. Second Fick's Law is applied to analyze the image change. The diffusion coefficient for this PAG in PHS during PEB is smaller than 8.8 X 10^-13 cm²/s.

Late-Breaking Developments

Positive-tone processing of plasma-polymerized methylsilane (PPMS) Paper

Gary Dabbagh, Richard S. Hutton, Raymond A. Cirelli, Elsa Reichmanis, Anthony E. Novembre, Omkaram Nalamasu

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312398

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Improved simulation of photoresists using new development models Paper

Ralph R. Dammel, John P. Sagan, Elaine Kokinda, Neville Eilbeck, Chris A. Mack, Graham G. Arthur, Clifford L. Henderson, Steven A. Scheer, Benjamen M. Rathsack, et al.

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312399

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Poster Session: DUV Materials

Water-castable bottom antireflective coatings Paper

Ping-Hung Lu, Salem Mehtsun, John P. Sagan, Ralph R. Dammel, Iain A. McCulloch, Ming Kang, Hatsuyuki Tanaka, Ken Kimura

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312400

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Poster Session: ArF Materials

New antireflective coatings for 193-nm lithography Paper

Gu Xu, Douglas J. Guerrero, Norman Dobson

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312401

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Late-Breaking Developments

New water-processable chemically amplified resists: three steps, two tones, one solvent Paper

Graham D. Darling, Alexander M. Vekselman, Shintaro Yamada

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312402

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Poster Session: Aspects in Lithography

E-beam and deep-UV exposure of PMMA-based resists: identical or different chemical behavior? Paper

A. Uhl, Juergen Bendig, J. Leistner, Ulrich A. Jagdhold, Joachim J. Bauer

Proceedings Volume Advances in Resist Technology and Processing XV, (1998) https://doi.org/10.1117/12.312404

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