This PDF file contains the front matter associated with SPIE Proceedings Volume 9856, including the Title Page, Copyright information, Table of Contents, Introduction, and the Conference Committee listing.

This paper reviews recent advances in the research of graphene-based van der Waals heterostructures for emission and detection of terahertz radiation. A gated double-graphene-layer (DGL) nanocapacitor is the core shell under consideration, in which a thin tunnel barrier layer is sandwiched by outer graphene layers at both sides. The DGL can support symmetric optical and anti-symmetric acoustic coupled plasmon modes in the GLs. The latter mode can modulate the band-offset between the GL, giving rise to modulation of the inter-GL-layer resonant tunneling. This can dramatically enhance the THz gain or responsivity via plasmon-assisted inter-GL resonant tunneling.

The newly discovered atomically thin and layered materials which host electronic system that respond to longwavelength light in extraordinary manner can lead to a major breakthrough in the field of terahertz (THz) optics and photonics. However, their low conductivities due to either low densities or low mobility make it challenging to characterize their basic THz properties with the standard spectroscopic method. Here, we develop a THz spectroscopic technique based on parallel plate waveguide (PPWG) to overcome the limitations of the conventional THz time domain spectroscopy (TDS) technique. The present method is particularly suitable to ultrathin conductive materials with low carrier density. We report in details the derivation of the dispersion equations of the terahertz wave propagation in a PPWG loaded by a thin conductive materials with zero-thickness. These dispersion equations for transverse magnetic (TM) and transverse electric (TE) waveguide modes are the core of the optical parameters extraction algorithm in the THz-PPWG-TDS analysis. We demonstrate the effectiveness of the waveguide approach by characterizing low conductive CVD graphene. The high sensitivity of THz-PPWG-TDS technique enables us to study the carrier dynamics in graphene with Drude and Drude-Smith model.

Sub-wavelength metamaterial structures are of great fundamental and practical interest because of their ability to manipulate the propagation of electromagnetic waves. We review here our recent work on the design, simulation, implementation and equivalent circuit modeling of metamaterial devices operating at Terahertz frequencies. THz metamaterials exhibiting plasmon-induced transparency are realized through the hybridization of double split ring resonators on either silicon or flexible polymer substrates and exhibiting slow light properties. THz metamaterials perfect absorbers and stereometamaterials are realized with multifunctional specifications such as broadband absorbing, switching, and incident light polarization selectivity.

We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With ultimately high-quality graphene where the electron scattering is only limited by acoustic phonons, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed 4 X 10¹² s^-1 at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. We show that the giant total growth rate originates from cooperative promotion of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.

This paper reports our invented methods for detection of counterfeit electronic. These versatile techniques are also handy in quality control applications. Terahertz pulsed laser systems are capable of giving the material characteristics and thus make it possible to distinguish between the materials used in authentic components and their counterfeit clones. Components with material defects can also be distinguished in section in this manner. In this work different refractive indices and absorption coefficients were observed for counterfeit components compared to their authentic counterparts. Existence of unexpected ingredient materials was detected in counterfeit components by Fourier Transform analysis of the transmitted terahertz pulse. Thicknesses of different layers are obtainable by analyzing the reflected terahertz pulse. Existence of unexpected layers is also detectable in this manner. Recycled, sanded and blacktopped counterfeit electronic components were detected as a result of these analyses. Counterfeit ICs with die dislocations were detected by depicting the terahertz raster scanning data in a coordinate plane which gives terahertz images. In the same manner, raster scanning of the reflected pulse gives terahertz images of the surfaces of the components which were used to investigate contaminant materials and sanded points on the surfaces. The results of the later technique, reveals the recycled counterfeit components.

Inspection of alien metal particles in electronic materials such as glass fibers and resins is a critical issue to control the quality and guarantee the safety of products. In this paper, we present a new detection technique using sub-millimeter wave for films as electric materials in product lines. The advantage of using sub-millimeter wave frequency is that it is easy to distinguish conductive particles from a nonconductive material such as plastic films. Scattering of a submillimeter wave by a metal particle is used as the detection principle. By simulation, it is observed that the scattering pattern varies intricately as the diameter varies from 10 to 700 μm at 300 GHz. The demonstration system is composed of a Keysight performance network analyzer (N5247A PNA-X) with 150–330 GHz VDI extension modules, transmitting and receiving antennas, and focusing dielectric lens. An output signal is radiated via an antenna and focused onto a metal particle on a film. The wave scattered by the metal particle is detected by an identical antenna through a lens. The signal scattered from a metal particle is evaluated from the insertion loss between antennas (S₂₁). The result shows that a particle of diameter 300 μm is detectable at 150–330 GHz through S₂₁ in the experimental system that we prepared. Peaks calculated in simulation were detected in experimental data as well as in the curves of the particle diameter versus S₂₁. It was shown that using this peak frequency could improve S₂₁ level without higher frequency.

The authors developed terahertz (THz) imager which incorporates 320x240 focal plane array (FPA) with enhanced sensitivity in sub-THz region (ca. 0.5 THz). The imager includes functions such as external-trigger imaging, lock-in imaging, beam profiling and so on. The function of the external-trigger imaging is mainly described in this paper, which was verified in combination of the THz imager with the pulsed THz free electron laser (THz-FEL) developed by Osaka University.

The THz-FEL emits THz radiation in a wavelength range of 25 - 150 μm at repetition rates of 2.5, 3.3, 5.0 and 10 pulses per second. The external trigger pulse for the THz imager was generated with a pulse generator, using brightening pulse for THz-FEL. A series of pulses emitted by the THz-FEL at 86 μm were introduced to the THz imager and Joule meter via beam splitter, so that the output signal of THz imager was normalized with the output of the Joule meter and the stability of the THz radiation from FEL was also monitored. The normalized output signals of THz imager (digits/μJ) obtained at the repetition rates mentioned above were found consistent with one another. The timing-relation of the external trigger pulse to the brightening pulse was varied and the influence of the timing-relation on beam pattern is presented. These experimental results verify that the external trigger imaging function operates correctly.

We propose a new approach for THz image quality enhancing using correlation function between the image under consideration and a standard image. The standard image moves in two directions along a image under analysis. As a result, 2 D correlation function is obtained. Multiplying this function by color number belonging to a grey scale, we restore the image under the analysis. This allows to suppress a noise on a new image. This method allows to see the person clothes details that it means multi-times increasing of the passive THz camera temperature resolution. We discuss a choice of standard image characteristics for an achievement of correlation function for high contrast. Other feature of our approach arises from a possibility of a person image coming to the THz camera by using a computer processing of the image only. It means that we can “decrease” a distance between a person and the passive THz camera. This algorithm is very convenient for using and has a high performance.

This paper introduces a novel reconstruction approach for enhancing the resolution of the terahertz (THz) images. For this purpose the THz imaging equation is derived. According to our best knowledge we are reporting the first THz imaging equation by this paper. This imaging equation is universal for THz far-field imaging systems and can be used for analyzing, describing and modeling of these systems. The geometry and behavior of Gaussian beams in far-field region imply that the FWHM of the THz beams diverge as the frequencies of the beams decrease. Thus, the resolution of the measurement decreases in lower frequencies. On the other hand, the depth of penetration of THz beams decreases as frequency increases. Roughly speaking beams in sub 1.5 THz, are transmitted into integrated circuit (IC) packages and the similar packaged objects. Thus, it is not possible to use the THz pulse with higher frequencies in order to achieve higher resolution inspection of packaged items. In this paper, after developing the 3-D THz point spread function (PSF) of the scanning THz beam and then the THz imaging equation, THz images are enhanced through deconvolution of the THz PSF and THz images. As a result, the resolution has been improved several times beyond the physical limitations of the THz measurement setup in the far-field region and sub-Nyquist images have been achieved. Particularly, MSE and SSIM´ have been increased by 27% and 50% respectively. Details as small as 0.2 mm were made visible in the THz images which originally reveals no details smaller than 2.2 mm. In other words the resolution of the images has been increased by 10 times. The accuracy of the reconstructed images was proved by high resolution X-ray images.

Compact and coherent source is a key component for various applications of the terahertz wave. We report on our recent results of terahertz oscillators using resonant tunneling diodes (RTDs). The RTD is an InGaAs/AlAs double-barrier structure on InP substrate, and integrated with a planar slot antenna as a resonator and radiator. The output power is obtained from the substrate side through a Si lens. To achieve high-frequency oscillation, a narrow quantum well and an optimized collector spacer thickness were used. The former reduces the electron dwell time in the resonant tunneling region and the latter simultaneously reduces the electron transit time and the capacitance at the collector depletion region. The conduction loss of the slot antenna was also reduced with an optimized antenna length and an improved air bridge structure between the RTD and antenna. By these structures, fundamental oscillation up to 1.92 THz were obtained at room temperature. Oscillation above 2 THz is further expected in theoretical calculation. An oscillator with patch antenna, in which a Si lens is unnecessary, was fabricated. In a preliminary experiment, output power of 55 μW was obtained at 1 THz in a three-element array. Wireless data transmission using direct intensity modulation was demonstrated with the data rate of 30 Gbp/s and the bit error rate below the forward error correction limit. By integrating a varactor into the slot antenna, electrical frequency tuning was achieved with a tuning range of 580-900 GHz in an array device. Application of frequency-tunable RTD oscillators to measurements of absorption spectra was also demonstrated.

Developing terahertz integration technology is essential for practical use of terahertz electromagnetic waves (0.1–10 THz) in various applications including broadband wireless communication, spectroscopic sensing, and nondestructive imaging. In this paper, we present our recent challenges towards terahertz system integration based on photonic crystal technology such as the development of terahertz transceivers. We use photonic-crystal slabs consisting of a twodimensional lattice of air holes formed in a silicon slab to develop low loss compact terahertz components in planar structures. The demonstration of ultralow loss (< 0.1 dB/cm) waveguides and integrated transceiver devices in the 0.3 THz band shows the potential for the application of photonic crystals to terahertz integration technology. Improving the coupling efficiency between the photonic crystal waveguide and resonant tunneling diode is important to take full advantage of the ultralow loss photonic crystal waveguides.

In this work I will present our latest advances in components developed from extraordinary transmission concepts operating at terahertz (THz) frequencies. First, a structure exhibiting two different extraordinary transmission resonances depending on the polarization of the incident wave will be shown. The peaks of transmission appear at approximately 2 and 2.5 THz for vertical and horizontal polarization, respectively, with a transmittance above 60% in both cases. Later on, a meandering line structure able to tune the extraordinary transmission resonance will be discussed. The operation frequency in this case is between 9 and 17 THz. A self-complementary polarizer will be then presented, with a high polarization purity. The fundamentals of this device based on the Babinet’s principle will be discussed in depth. Finally, all these structures will be combined together to produce a dual-band Quarter Wave Plate able to convert a linear polarization at the input in a circular polarization at the output at two different bands, 1 and 2.2. THz. Some final words regarding the potential of extraordinary transmission for sensing applications will close the contribution.

An all-semiconductor-based hetero-barrier rectifier, named a Fermi-level managed barrier diode (FMB diode), was developed for enabling broadband and low-noise THz-wave detection. The barrier height was controlled by the doping in n-type InGaAs so that a very small height barrier (about 53 meV) could be realized for obtaining a small intrinsic differential resistance (about 23 Ω/m²) and a large output current density (more than 5 X 10³ A/cm²). The fabricated quasi-optical module was operated at frequencies from 200 GHz to 1 THz at room temperature. The typical zero-biased voltage sensitivity was 1280 V/W at 300 GHz, which was higher than the reported best results for InP-based zero-biased broadband Schottky barrier diodes.

In this paper, we demonstrate the monolithic integration of two resonant tunneling diodes (RTD) to make a THz mixer circuit. The circuit uses two RTDs, which are integrated in one carrier substrate. The RTDs are biased independently. The fist RTD operates as an oscillator and provides the local oscillator signal for the second RTD operating as a mixer. The measurements demonstrate that a monolithic integration of several RTDs in one substrate is feasible. This offers new possibilities for RTD based wireless communication and sensing systems.

Reliable detection of energetic materials is still a formidable challenge which requires further investigation. The remote standoff detection of explosives using molecular fingerprints in the terahertz spectral range has been an evolving research area for the past two decades. Despite many efforts, identification of a particular explosive remains difficult as the spectral fingerprints often shift due to the working conditions of the sample such as temperature, crystal orientation, presence of binders, etc. In this work, we investigate the vibrational spectrum of energetic materials including RDX, PETN, AN, and 1,3-DNB diluted in a low loss PTFE host medium using terahertz time domain spectroscopy (THz-TDS) at cryogenic temperatures. The measured absorptions of these materials show spectral shifts of their characteristic peaks while changing their operating temperature from 300 to 7.5 K. We have developed a theoretical model based on first principles methods, which is able to predict most of the measured modes in 1, 3-DNB between 0.3 to 2.50 THz. These findings may further improve the security screening of explosives.

Time-resolved terahertz spectroscopy (TRTS) was used to explore charge generation, transfer, and the role of hot carriers in organic solar cell materials. Two model molecular photovoltaic systems were investigated: with zinc phthalocyanine (ZnPc) or alpha-sexathiophene (α-6T) as the electron donors and buckminsterfullerene (C₆₀) as the electron acceptor. TRTS provides charge carrier conductivity dynamics comprised of changes in both population and mobility. By using time-resolved optical spectroscopy in conjunction with TRTS, these two contributions can be disentangled. The sub-picosecond photo-induced conductivity decay dynamics of C₆₀ were revealed to be caused by auto-ionization: the intrinsic process by which charge is generated in molecular solids. In donor-acceptor blends, the long-lived photo-induced conductivity is used for weight fraction optimization of the constituents. In nanoscale multilayer films, the photo-induced conductivity identifies optimal layer thicknesses. In films of ZnPc/C₆₀, electron transfer from ZnPc yields hot charges that localize and become less mobile as they thermalize. Excitation of high-lying Franck Condon states in C₆₀ followed by hole-transfer to ZnPc similarly produces hot charge carriers that self-localize; charge transfer clearly precedes carrier cooling. This picture is contrasted to charge transfer in α-6T/C₆₀, where hole transfer takes place from a thermalized state and produces equilibrium carriers that do not show characteristic signs of cooling and self-localization. These results illustrate the value of terahertz spectroscopic methods for probing charge transfer reactions.

The terahertz spectra of triadimefon has been investigated using time-domain THz spectroscopy (THz-TDS) in the range of 0.4~2.0 THz. Calculations of the vibrational modes and intensities are carried out using solid-state density functional theory (DFT) with periodic boundary condition employing the B3LYP and PW91 density functions. Good agreement between the calculated and experimentally measured spectra has been achieved where isolated-molecule calculations fail to reproduce the observed spectral characters. These simulations reveal that the solid-state DFT calculations provide high quality structural and spectral reproductions. All the experimental THz absorption peaks are assigned utilizing the PW91 and BLYP method.

In this work, terahertz images have been simulated from X-ray images. For this aim the terahertz raster scanning process is modeled by a two dimensional convolution of the modelled THz beam and the X-ray image. The mathematical model of the terahertz beam has been modeled by a Gaussian function. The variables in this function are frequency of the beam, lateral location and absorption coefficient of the object. The accuracy of the proposed approach has been verified by comparing the results with the actual terahertz images.