III-Nitride based light-emitting diodes based on InGaN active layers formed on GaN, are fine for the blue and green emitting LEDs. However, the large lattice mis-match between red-emitting active layers and the GaN substrate still limits the efficiencies to very low values, typically <5%. We propose to use seeding techniques originally developed for nanowire growth, to seed the formation of ternary InGaN pyramids which later are converted to thin c-facet platelets of InGaN. I will in this presentation show that such relaxed, and dislocation-free, InGaN platelets with In-composition about 20%, have the potential as ideal templates for red-emitting microLEDs. Of special significance is the fact that our technology provides all three RGB microLED sources with one and the same InGaN technology, and with the same efficiency and with the maintained efficiency down to pixel sizes of just 1-2 µm in diameter.
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