Presentation
24 March 2023 Relaxed InGaN templates as a basis for ultra-small RGB-emitting microLEDs
Zhaoxia Bi, Jovana Colvin, Anders Gustafsson, Rainer Timm, Reine Wallenberg, Bo Monemar, Mikael Björk, Lars Samuelson
Author Affiliations +
Abstract
III-Nitride based light-emitting diodes based on InGaN active layers formed on GaN, are fine for the blue and green emitting LEDs. However, the large lattice mis-match between red-emitting active layers and the GaN substrate still limits the efficiencies to very low values, typically <5%. We propose to use seeding techniques originally developed for nanowire growth, to seed the formation of ternary InGaN pyramids which later are converted to thin c-facet platelets of InGaN. I will in this presentation show that such relaxed, and dislocation-free, InGaN platelets with In-composition about 20%, have the potential as ideal templates for red-emitting microLEDs. Of special significance is the fact that our technology provides all three RGB microLED sources with one and the same InGaN technology, and with the same efficiency and with the maintained efficiency down to pixel sizes of just 1-2 µm in diameter.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhaoxia Bi, Jovana Colvin, Anders Gustafsson, Rainer Timm, Reine Wallenberg, Bo Monemar, Mikael Björk, and Lars Samuelson "Relaxed InGaN templates as a basis for ultra-small RGB-emitting microLEDs", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC1244102 (24 March 2023); https://doi.org/10.1117/12.2649606
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KEYWORDS
Indium gallium nitride

Light emitting diodes

Gallium nitride

Aluminium gallium indium phosphide

Augmented reality

Gallium arsenide

Indium

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