Triplet-polaron quenching (TPQ) is one of the main causes of exciton loss in OLED devices, which seriously limits the luminance efficiency. In host-guest blend systems, which a phosphorescent “guest” emitter is diluted in a “host” material, the polarons can be located on a host or a guest molecule, and can be holes or electrons, dependent on the energy level structure. However, the mechanism of TPQ and the relation of the interaction strength with the molecular structure are not well known. Here, we present an integrated approach of experimental and simulation methods for obtaining TPQ interaction strength.
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