HgCdTe Mid-Wavelength Infrared (MWIR) Epitaxial Mosaics For Tactical Applications

William E. Tennant

doi:10.1117/12.959907

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20 July 1981 HgCdTe Mid-Wavelength Infrared (MWIR) Epitaxial Mosaics For Tactical Applications

William E. Tennant

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Proceedings Volume 0267, Staring Infrared Focal Plane Technology; (1981) https://doi.org/10.1117/12.959907
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

Epitaxial HgCdTe/CdTe, combined with ion implantation technology, has proven ideally suited for proposed photodiode focal plane array applications. State-of-the-art performance planar photodiodes have been fabricated in epitaxial materials of all wavelengths. Important applications of these arrays are in tactical defense missions employing MWIR arrays operated at 77K and near 195K. A critical issue for these devices is stability through the bakeout required for the sealing off of dewar packaging. We report measurements of ion-implanted HgCdTe/CdTe devices and arrays which have broadband spectral response (when illuminated through the CdTe) and high RoA values (~ 11 Ω-cm2 at 195K for λc (50%) = 4.35 μmm, > 106 Ω-cm2 at 77K for λc (50%) = 4.7 μm). Stability of both planar and mesa devices and arrays through various bake conditions has been demonstrated.

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William E. Tennant "HgCdTe Mid-Wavelength Infrared (MWIR) Epitaxial Mosaics For Tactical Applications", Proc. SPIE 0267, Staring Infrared Focal Plane Technology, (20 July 1981); https://doi.org/10.1117/12.959907

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