Submicron Grating Fabrication On GaAs

D. Heflinger; J. Kirk; R. Cordero; G. Evans

doi:10.1117/12.959951

29 July 1981 Submicron Grating Fabrication On GaAs

D. Heflinger, J. Kirk, R. Cordero, G. Evans

Proceedings Volume 0269, Integrated Optics I; (1981) https://doi.org/10.1117/12.959951
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

The laboratory techniques used for the fabrication of submicron gratings in GaAs are presented. A thin (≈1250 Å) film of Shipley AZ1450B photoresist on GaAs is exposed holographically with the use of the 4579 A line of an argon ion laser to produce gratings with a period of approximately 0.35 μm. Data are presented that demonstrate the effects of variation of the following parameters: developer type, developer time, laser intensity, exposure time, photoresist thickness, and ion beam etching parameters. Relative grating efficiency measurements as a function of parameter variations indicate an optimum set of parameters for grating fabrication.

Citation Download Citation

D. Heflinger, J. Kirk, R. Cordero, and G. Evans "Submicron Grating Fabrication On GaAs", Proc. SPIE 0269, Integrated Optics I, (29 July 1981); https://doi.org/10.1117/12.959951

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