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28 July 1981 Epitaxial HgCdTe/CdTe Photodiodes For The 1 -3 μm Spectral Region
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Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965688
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
Hgi-xCdxTe epitaxial layers have been successfully grown in various compositions, for 1-3 μm applications. n+/p junctions are formed either by a standard B-implantation into as-grown p-type layers or by doubly grown p- and n-layers. The SWIR HgCdTe photodiodes exhibit quantum efficiencies of 55-65% without AR coating. For the diodes with 1.39 μm cut-off at room temperature, the zero bias detector resistance-area (RoA) product is 4 x 10 4 Ω-cm2, and the dark current density is ~ 1 x 10 -4 A/cm2 at half-breakdown voltage. The same values of ~ 104 Ω-cm2 RoA products have also been measured for 2.4 μm cut-off photodiodes at 195K. The energy gap and temperature dependence of RoA product is in excellent agreement with the bulk limited generation-recombination model. The breakdown voltages of SWIR diodes vary from 12 volts to greater than 130 volts, depending on the Cd composition (x) and base carrier concentrations.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. H. Shin, J. G. Pasko, and D. T. Cheung "Epitaxial HgCdTe/CdTe Photodiodes For The 1 -3 μm Spectral Region", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965688
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