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28 July 1981In0.53Ga0.47As Field-Effect Transistor (FETs) And PIN-FETs
The transport properties of In0.53Ga0.47As indicate that this ternary material is a strong candidate for future FET's. Early results reported for FET's prepared from this material are reviewed and compared. The advantage of the JFET for fabrication of PIN-FET integrated optical receiver circuits is pointed out and updated results are presented for these devices. Transconductance values are presently 50 mS/mm, while work aimed at further reduction of gate dimensions is expected to yield even higher values.
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R. E. Nahory, R. F. Leheny, "In0.53Ga0.47As Field-Effect Transistor (FETs) And PIN-FETs," Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965689