InGaAs Avalanche Photodetectors

G. E. Stillman; L. W. Cook; M. M. Tashima; N. Tabatabaie

doi:10.1117/12.965684

28 July 1981 InGaAs Avalanche Photodetectors

G. E. Stillman, L. W. Cook, M. M. Tashima, N. Tabatabaie

Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965684
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

The development of optical fibers with extremely low loss and near zero pulse dispersion in the 1.30-1.55 pm spectral range has generated considerable interest in emitters and detectors for use in optical fiber communication systems utilizing these wavelengths. The InGaAsP quaternary alloy, lattice matched to InP, is one of at least three different semi-conductor alloys being evaluated for detector applications in these systems. In this paper we will review some of the previous results obtained in InGaAsP/InP photodetectors, and discuss the possible mechanisms responsible for the large dark current observed in some of these devices. The material properties and device structures which minimize the dark current are described, and the possibilities of achieving efficient avalanche photodiodes using these materials are evaluated.

Citation Download Citation

G. E. Stillman, L. W. Cook, M. M. Tashima, and N. Tabatabaie "InGaAs Avalanche Photodetectors", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965684

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