Nonplanar GaAs/GaAIAs Lasers By Metalorganic Chemical Vapor Deposition

R. D. Burnham; D. Fekete; D. R. Scifres; W. Streifer

doi:10.1117/12.965696

28 July 1981 Nonplanar GaAs/GaAIAs Lasers By Metalorganic Chemical Vapor Deposition

R. D. Burnham, D. Fekete, D. R. Scifres, W. Streifer

Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965696
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

In this paper, we discuss the operation of a non-planar GaAs/GaA1As laser grown by metalorganic chemical vapor deposition. The non-planar structure is achieved by using a self-aligned masking technique. The masking causes lateral spatial variations to develop during the growth of the active and/or cladding regions. These lasers inherently have both lateral current confinement and lateral real refractive index waveguidance. Threshold currents of ≈40 mamps and differential quantum efficiencies of 32% are measured very reproducibly over a wafer.

Citation Download Citation

R. D. Burnham, D. Fekete, D. R. Scifres, and W. Streifer "Nonplanar GaAs/GaAIAs Lasers By Metalorganic Chemical Vapor Deposition", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965696

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