Infrared Transmission Characterization Of P-Type Gallium Arsenide

W. J. Moore

doi:10.1117/12.931693

30 April 1981 Infrared Transmission Characterization Of P-Type Gallium Arsenide

W. J. Moore

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931693
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The capabilities and limitations of infrared transmission as a characterization tool for p-type gallium-arsenide are being studied. Absorption spectra resulting from impurity ground state to excited state transitions have been analyzed to yield impurity activation energy and absorption cross section. These data allow determination of impurity type and concentration. Sensitivities achieved with copper, manganese, and magnesium are discussed.

Citation Download Citation

W. J. Moore "Infrared Transmission Characterization Of P-Type Gallium Arsenide", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931693

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