Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers

N. Bottka; Marian E. Hills

doi:10.1117/12.931701

30 April 1981 Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers

N. Bottka, Marian E. Hills

Author Affiliations +

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931701
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Internally reflected electroabsorption, a modulation spectroscopy tool, can be used as a nondestructive optical method to determine the gap energies and, hence, the composition of the epitaxial layers in heterostructures. At the same time, the presence of built-in inter-face potentials can also be determined. The method was used to study n-n GaAs_1-xSb_x hetero-structures grown on n_⁺GaAs substrates using a simple Schottky barrier contact.

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N. Bottka and Marian E. Hills "Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931701

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