Paper
30 April 1981 Optical Properties Of Lamelliform Materials
Roy F. Potter
Author Affiliations +
Abstract
Planar technology for today's electronic devices (ic's, p wave devices, IR detectors, etc.) are constructed of lamellae of metals, insulators and semi-conductors of varying thicknesses. Because thickness and material properties affect device parameters and influ-ence performance characteristics, their measurement and control is essential. Optical property measurements of these lamelliforms provide non-destructive techniques for acquiring information pertinent to device performance characteristics. A brief review of the charac-teristic matrix for the E-M wave equations is given, leading to the matrices involving the Fresnel relations. The relationships of reflectance, transmittance, and absorbtance (emit-tance) for both polarizations and all angles of incidence for a thick plane-parallel dielectric slab, having two differing series of layers on either side, will be given. A description of these relationships applied to a thin (d/λ > 2%) layer on an opaque substrate is presented. Included is a brief description of the two angle of incidence technique of AIRS (Angle of Incidence Reflection Spectroscopy) for studying such systems.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roy F. Potter "Optical Properties Of Lamelliform Materials", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931707
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Cited by 2 scholarly publications.
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KEYWORDS
Reflectivity

Semiconductors

Transmittance

Matrices

Darmstadtium

Rubidium

Interfaces

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