Optical Properties Of Chemical Vapor Deposition (CVD) Silicon Nitride

R. A. Tanzilli; J. J. Gebhardt

doi:10.1117/12.932485

26 February 1982 Optical Properties Of Chemical Vapor Deposition (CVD) Silicon Nitride

R. A. Tanzilli, J. J. Gebhardt

Proceedings Volume 0297, Emerging Optical Materials; (1982) https://doi.org/10.1117/12.932485
Event: 25th Annual Technical Symposium, 1981, San Diego, United States

Abstract

Silicon nitride, prepared by the chemical vapor deposition (CVD) method, transmits electromagnetic energy in the visible, infrared and radar frequency ranges. In this paper, the visible and infrared transmittance properties of polished flat plate and hemispherical shell geometries are described. Integrating sphere hemispherical and in-line specular transmittance measurements indicate near intrinsic levels are being achieved in the infrared wavelength region, however, a diffuse scattering component is limiting imaging capability. Current processing research is aimed at identifying deposition conditions which will eliminate major scattering sources such as the microcrack network found in all deposits made to date. Achievement of this research goal will broaden the optical applications of this unique refractory ceramic.

Citation Download Citation

R. A. Tanzilli and J. J. Gebhardt "Optical Properties Of Chemical Vapor Deposition (CVD) Silicon Nitride", Proc. SPIE 0297, Emerging Optical Materials, (26 February 1982); https://doi.org/10.1117/12.932485

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