The evolution of ballistic missile defense (BMD) system concepts is summarized, and the potential roles of optics in the future of BMD are outlined. The system motivation and development trends for exoatmospheric cold LWIR sensors are given, and current measurement programs that offer a demonstration of this technology are described. Finally, the potential and requirements for endoatmospheric optics and space based lasers are summarized.

The military requirement to remotely detect and identify objects under realistic battlefield conditions has motivated substantial interest in the region of the electro-magnetic spectrum between microwaves and infrared frequencies with primary focus on that region bounded by atmospheric "windows" between 100 and 1000 GHz.1 This region offers an attractive compromise between the high resolution capabilities of infrared radiation and the low loss propagation characteristics of microwaves. In terms of technology, this region of the spectrum represents a transitional zone between microwave technology and optical technology. This has resulted in a dichotomy of techniques applied to construct systems. On one hand we see devices and systems which utilize modal techniques; i.e., conventional hollow metallic waveguides, and on the other hand, we see devices and systems which utilize quasi-optical, ray techniques; i.e., lenses, beam splitters.

An Integrated Optics Strapdown Inertial System Configuration is described. The new concept is based on the passive ring resonator approach now being developed for the Laser Gyro. The measurement of rotation rate and acceleration is accomplished using a common ring resonator where both devices operate in the frequency domain. In addition, a laser accelerometer is described using the interferometer approach and operates in the phase domain. The study is an important first step that may lead to a new Strapdown Inertial System where the accelerometer and gyro are implemented on a single "chip" which would allow the system to be packaged in a very small volume and could possibly lead to a low cost sensitive strapdown system that could be universally used in both military and com-mercial carriers.

Integrated optical logic devices offer the potential of operating at high speeds and at low powers. This paper discusses some of the basic requirements of an optical logic device, also presented are the characteristics of various existing and proposed optical logic devices.

Experimental results are presented and compared to theory for losses in Ti diffused LiNbO3 3μ wide channel waveguides having bends. The results include loss due to radiation of the energy away from the waveguide as it propagates around a curved portion of a wave-guide. Scattering loss at corner bends, straight to curved junction and curved to curved junctions are also presented. Experimental results of coherent coupling effects between successive abrupt bends to reduce bending losses is also presented.

The coupling of single-mode fibers-to-LiNb03:Ti diffused channel waveguides has been addressed. Coupling losses of less than 1 dB have been measured between ITT single-mode fiber and diffused guides at 0.83 μm wavelength. A four-section Δβ reversal switch has been permanently coupled to single-mode fiber pigtails with coupling losses approaching the measured optimum and theoretically predicted value.

The optical damage resistance of diffused lithium niobate waveguides is reviewed. Long-term laser-power-handling performance is assessed by recording the spatial intensity changes occurring as a function of time in a waveguide's far-field. Out-diffused waveguides are found to offer significantly greater long-term resistance to optical power-losses caused by optical damage than do wavegudies formed by either ion-exchange or titanium-in-diffusion. Any waveguide's resistance to optical damage is lowered by inadvertant exposure to chemical reducing conditions that can prevail during device fabrication processes. Waveguides exposed to the severe chemical reducing conditions are found to exhibit dramatically non-linear behavior when exposed to high laser powers and short laser wavelengths.

This paper describes the development of the Multiwavelength Monolithic Integrated Fiber Optic Terminal (MMIFOT) by MDAC-St. Louis for the NASA Johnson Space Center. The program objective is to utilize guided wave optical technology to develop wave-length multiplexing and demultiplexing units using a single mode optical fiber for transmission between terminals. Intensity modulated injection laser diodes, chirped diffraction gratings and thin film lenses are used to achieve the wavelength multiplexing and demultiplexing. The video and audio data transmission test of an integrated optical unit with a Luneburg collimation lens, waveguide diffraction grating and step index condensing lens is described.

Because of the high degree of versatility and controllability possible in growing III-V compound semiconductor epitaxial layers having precise thickness, compositional and doping profiles by molecular beam epitaxy (MBE), a new generation of electronic and photonic devices are conceived and demonstrated. Such versatility and controllability stem simply from the ability to independently control and vary accurately and conveniently the flux density of each individual constituent source elements during the epitaxial process. In this paper, some illustrative examples of new devices in the photonic area and the device physics involved make possible because of these unique capabilities of MBE will be reviewed.

A rib-like waveguide structure consisting of three dielectric films is analyzed, in which properly chosen film thicknesses allow the lateral containment of any selected waveguide mode, with the unselected modes radiating laterally away from the rib structure. The wave-guide consists of two high-index films separated by a low index layer in which the fields are evanescent. The lateral guidance method mechanism arises from the joint dependence of the planar waveguide mode propagation constants on the strength of evanescent coupling between the two high-index films, and on the propagation constant difference between the planar wave-guide mode and one with exactly resonant coupling between the high-index layers. Depending on the mode and the film thicknesses, the radiation is guided along a ridge or a trough in the thickness of the low-index layer. Unlike mode-stripping structures based on preferential absorption of the unwanted modes, this all-dielectric structure introduces no loss to the selected mode, other than the unavoidable scattering and residual absorption in the dielectric media, and the reflection and radiation loss at one required longitudinal inteface between adjacent waveguide sections. Also, unlike mode-selecting structures based on Bragg effects, no maintenance of phase-matched conditions over controlled propagation lengths is required.

Laser gyros are beginning to replace "spinning wheel" gyros in some higher-performance applications because they offer lower cost of ownership. However, in applications such as tactical missile guidance their cost is too high for the performance needed. The use of integrated optics will lower the cost of optical gyros. In this paper, the different kinds of optical gyros are compared, and examples of the use of integrated optics elements in the micro-optic gyro are given.

The electrooptic Grating is an easily-fabricated component for integrated-optical applications that allows high-speed, efficient interaction with a guided optical wave in a planar waveguide. The use of these components in arrays allows implementation of several interesting and useful functions like spatial light modulation, correlation, parallel-to-serial conversion, and vector subtraction. We describe research on such devices; some potential applications in computation are also described.*

Several novel semiconductor lasers with structures different from the simple Fabry-Perot laser are considered for use in integrated optics. Potential advantages of these lasers are discussed. Experimental results confirming some of the theoretical predictions will be presented in the talk.

The potential application of (GaAl)As injection lasers and high speed optical detectors in future Ghz bandwidth communication, microwave and computer fiber-optic systems requires an extensive knowledge of simple and accurate characterization techniques, high frequency characteristics of existing commercial lasers and high speed optical detectors.

The primary objective of this investigation was to analytically determine the effect of a plane dielectric interface upon the radiation loss of a curved channel dielectric wave-guide embedded in a dense substrate as commonly encountered in millimeter and optical integrated circuits. Results of our study indicate that in contrast to the case of a bent channel guide embedded in a homogeneous medium with an algebraic behavior of R0-1/2 (R0 is the radius of curvature of the bent channel guide), the radiation of a bent channel guide embedded below a plane dielectric interface exhibits an R0-3/2 dependence. This altered algebraic dependence can result in significant reductions in radiation loss.

Free-carrier compensation by ion implantation is a potentially important processing technique in forming optical waveguides for multiplexing applications. This process leads to a cutoff condition for waveguiding that is wavelength independent. Gallium phosphide is an attractive semiconductor material for such multiplexing since it is transparent from the visible out into the far infrared. In order to better establish these possibilities, experiments have been performed to help clarify the influence of various implantation parameters on the carrier compensation process and to relate the resulting optical effects to these electronic changes. Sulfur doped,n-type, single crystal GaP wafers were implanted with 300 keV protons at fluence levels up to 1016 ions/cm2 . Initial carrier concentration was approximately 18 18/cm3 and wafer temperature was maintained at 350°, 25° or -140°C during implantation. Capacitance-voltage measurements were made on each implanted wafer to establish whether a compensated layer had been formed and, if so, to determine its thickness. The implanted wafers were then tested for waveguiding at visible and infrared wavelengths. Optical waveguiding was achieved at 0.6328 microns and at 1.15 microns using HeNe lasers and at 10.6 microns with a CO2 laser.

A thermal analysis has been completed on an injection laser stack based on the electrical power dissipation within the laser stack material during operation. The thermal gradient existing in the laser stack during operation can cause large wavelength variations among individual lasers of the stack if certain fabrication procedures are not followed. For a given electrical power dissipation, a "monochromatic" injection laser stack can be designed (i.e., the spectral peaks of all lasers within the stack being at the same wavelength). A prescription for laser diode preselection prior to fabrication is given. The dominant source of temperature variations within the stack is electrical resistance non-uniformities of solder connections, causing non-uniform heating of the laser stack during a current pulse. Results of an experiment for measuring the temperature distribution of the injection laser stack after a single pulse are described which demonstrate electrical resistance non-uniformities within the stack. Finally, the minimum receiver filter spectral bandwidth corresponding to this thermally compensated injection laser stack is calculated.

We have designed and fabricated high performance acousto-optic tunable filters for operation in the infrared from 1.3 to 16 μm. These have been made from the crystal TL3AsSe3, in both collinear and non-collinear configurations. High efficiency has been achieved with low RF power density with interaction lengths up to 10 cm. This has become possible due to advances in the technology of large boule, oriented crystal growth.*

Novel all-optical signal processing devices can be realized by utilizing optical power-dependent refractive-index materials in guided-wave resonators. The resonators are channel waveguide structures that obtain their feedback by means of cleaved mirrors, a corrugation, or a ring geometry. The nonlinear material can be part of the waveguide, of the cladding, or both. As the power carried by the guided wave in the resonator is increased, the effective refractive index of the waveguide changes, the optical path length is modified, and the resonator switches between transmission and reflection states. As a result, the resonator exhibits optical hysteresis, and acts as an intrinsic bistable device. We present the general theory of power-dependent refractive-index waveguides, and apply the theory to some devices that can serve as all-optical signal processors, such as optical amplifiers, discriminators and memory devices.

A unique application of optical fiber for use as a missile guidance link is described. This application utilizes a single fiber payed out from the missile during flight to provide a full duplex bi-directional data link between the missile and the ground control station. The unique properties of the link as applied to missile weaponry and the implications of these features on link design are discussed. The Army Missile Laboratory is presently conducting a supporting research program whose objective is the flight demonstration of sucn a data link. The hardware constructed during this program and its performance is presented.

The basic principle of applying a specific contact screen for performing multiplex holographic filtering in a real-time coherent optical correlator is described.*

In the field of optical correlation, a number of applications have been demonstrated successfully in the laboratory. As a result, field demonstration models will be constructed soon. These include missle guidance l, word processing2, and film screening3. In each of these applications, and for nearly all other correlator applications, large memory and/or some memory adaptability is necessary for the performance of the designated task.

Coherent optical pattern recognition assumes space invariance, yet integrated and partially-integrated optical systems are certain to have space-invariant modulation transfer functions. We define a concept of "optimum space-invariant filter" for this space-variant system and show how composite matched filters can be optimized according to that criterion.

Angular division multiplexing has been proposed as a technique for expanding the information capacity of a single optical fiber, through the separation of modal groups into distinct information channels, which also minimize pulse spreading by means of a significant reduction in intermodal dispersion. The properties of optical fibers required for angular division multiplexing are described. Modal group excitation is achieved through the use of components which are capable of launching plane waves at different angles into the fiber. The far field at the fiber output consists of a number of concentric annular rings, each corresponding to a transmission channel. This paper contains a description of input and out-put components for achieving selective modal group excitation and detection. Measurements demonstrating the feasibility of angular division multiplexing are reported. Coupling efficiency of the input multiplexer, using a 0.5 mm GRIN rod microlens is 45.5%. Crosstalk between two channels on a 250 meter step-index fiber is -22 dB and -15 dB on a 730 meter step-index fiber.

This paper describes the operation of the Hughes Liquid Crystal Light Valve (LCLV) with emphasis placed on reviewing the ways of optically addressing the LCLV. Also the multi-spectral read-out capabilities of the device are discussed.

Advances in mosaic focal plane array IR technology and optical spatial light modulators make an optical processor for high resolution imagery most attractive. A conceptual methodology to integrate these diverse technologies will be described. The system concept involves a fully corrected IR focal plane, a digital preprocessor and an optical correlator. The resultant system has potential use for missile guidance, surveillance, reconnaissance, and other similar pattern recognition problems.

The structure and operation of two novel liquid crystal light valves (LCLV) are described: the photo activated, silicon-photoconductor-based LCLV and the electronically-addressed CCD-LCLV. The current status of both devices are detailed. Applications of these devices for signal and image processing are given.

Several different waveguiding technologies are presently contending for use in the frequency range 100-300 GHz. These include conventional hollow metal waveguide, finline, microstrip, stripline, dielectric image guide, and all-dielectric guides. Which type of guide to use depends strongly on the application; moreover, comparisons are clouded by a number of competing technical problems that are still hard to evaluate. In our work we have concentrated on all-dielectric guides, especially the type known as "slab-coupled" or "rib" waveguides. The advantages of this type of guide are as follows: (a) they are easily fabricated using photolithography; (b) in contrast to other guides, they are expected to perform better as frequency is increased; (c) they have acceptably low loss; (d) they lend themselves to use as a basis for other components such as filters, couplers, and resonators; (e) when the dielectric is a semiconductor, they can be integrated with semi-ocnductor devices to form millimeter-wave integrated circuits. We have studied these guides by means of X-band simulation and have also constructed various devices at several frequencies ranging from 70 to 2500 GHz. Problems to be discussed will include: (a) coupling from free space propagation into guides; (b)coupling between guides and diodes; (c) waveguide-based components and systems; and (d) integration with semiconductor devices.

A millimeter-wave imaging antenna array has been demonstrated for the first time at 245GHz. The array is a line of evaporated silver bow-tie antennas on a fused-quartz substrate with bismuth-microbolometer detectors. The measured optical transfer function shows that the system is diffraction-limited. If the microbolometers can be replaced by more sensitive diode detectors, the array should find application in radiometry and radar.

This paper describes how various concepts and ideas developed in integrated optics structures can be and have been applied toward development of new components and devices for millimeter-wave integrated circuits. Methods of analyzing dielectric waveguides are given and examples of passive and active components made of dielectric waveguides are presented. We discuss possibilities of developing new active and nonreciprocal structures based on the distributed interaction of the guided waves with matters. Some of the difficulties involved in development of these devices are included.

A new class of device - optoelectronic millimeter-wave modulator is reported. Phase shifts as high as 300°/cm at 94 GHz using less than 10μj of optical energy were measured. Ultrafast switching and gating of millimeter-wave signals as short as 1 ns were readily obtained.

We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, unique secondary ion mass spectroscopy (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra-thin, reproducible wafers, and have resulted in the development of silicon hybrid circuits, thus paving the way to production of silicon monolithic integrated millimeter-wave sources.

The availability of high quality, large diameter GaAs substrates is key to the success-ful development and production of high-speed GaAs devices and high efficiency GaAs solar cells. The liquid encapsulated Czochralski (LEC) technique has provided a means for pro-ducing large-diameter GaAs.1-4 We wish to report progress in improving the LEC growth process which has resulted in 3-inch GaAs crystals with exceptionally low dislocation densities and reduced propensity for twinning. Undoped, semi-insulating GaAs ingots were grown in a Melbourn high pressure LEC system. We investigated the effects of seed perfection, seed necking, cone angle, melt stoichiometry, ambient pressure, thickness of the B203 encapsulating layer, and diameter control on the dislocation density. The material was characterized by preferential etching and X-ray topography. We show 3-inch diameter substrates can be produced with dislocation densities as low as 6000 cm-2 through proper selection and control of growth parameters. Also, the incidence of twinning can be reduced significantly by growing from slightly As-rich melts.

A novel electrostatic barrier concept, known as a planar doped barrier (PDB), has been demonstrated in GaAs crown by molecular beam epitaxy (MBE). The PDB structure has an n+-i-o+-i-n+ configuration in which a thin acceptor layer (50A) is placed within an undoped semiconductor region bounded by donor layers. Since the PDB is a majority carrier semicon-ductor structure with electron conduction by thermionic emission, it can be operated at extremely high frequencies. The key features of the PDB are that the zero-bias barrier height and the dearee of asymmetry in the rectifying I-V characteristics can be continually and in-dependently controlled. The zero-bias barrier height can be effectively varied from zero to sliahtly less than the bandgap of the semiconductor. In addition, the capacitance of the PDB is virtually constant over the entire operating voltage range. In contrast to Schottky barriers, the ability to design the electrical, properties of planar doped barriers can be used to optimize the performance of many electronic devices. The PDB concept has very important applications in high-frequency microwave and millimeter wave devices. PDB mixer diodes have been made which utilize low barrier heights for high sensitivity and low local oscillator power requirements. Very high speed PDB photodiodes have been demonstrated with subnanosecond response times. In addition, a revolutionary new planar doped barrier transistor (PDBT) is currently being developed for three-terminal am-plification in the millimeter wave frequency range. These devices will have sianificant im-pact in defense-related secure communications and miniaturized high-resolution radar systems.

Ferrimagnetic oxides with hexagonal crystal structures (referred to as hexagonal ferrites) are characterized primarily by their foliate (leaf-like or platelet) structure and high anisotropy fields. These properties allow for the preparation of polycrystalline grain oriented magnetic compounds with controlled values of anisotropy fields and attendant preferred direction of magnetization. These highly anisotropic aligned polycrystalline hexagonal ferrite compoundspossess built-in effective magnetic fields (up to 50 kilo-oersteds) in both uniaxial and planar structures, with associated electrical properties appropriate for many application considerations in signal control and processing components at millimeter wave frequencies. This paper reviews the crystal structures and the molecular engineering techniques utilized to prepare aligned uniaxial hexagonal compounds with controlled anisotropy fields up to values of 50 Koe. The properties of these compounds important to millimeter wave applications are summarized.

The need for large area HgCdTe material of good crystalline quality for IR detectors and advanced focal plane arrays has prompted research in thin film HgCdTe. Although several techniques are currently being explored, liquid phase epitaxy (LPE) appears to be the most promising. A HgCdTe LPE approach is defined by the growth solution or melt, the growth mode, and the mechanics of bringing the substrate, usually CdTe, in contact with the melt. Growth of narrow bandgap Hgl_xCdxTe alloys is obtained from both Hg-rich and Te-rich melts. An additional post-anneal step in a Hg atomsphere is required for n-type conversion. Equilibrium cooling and isothermal growth are the most frequently used growth modes. Each mode requires careful determination of the liquidus temperature to obtain films with reproducible characteristics. Isothermal growth from a large melt offers the inherent advantage of a more uniform alloy composition in the depth of the film. The three customary methods of bringing the melt and substrate into contact are: 1) dipping the substrate into the melt, 2) sliding the melt on and off the substrate, and 3) tipping the melt on and off the substrate. Of the three, tipping appears to be least suited for a production process. In their present state of development, Hgl_xCdxTe epitaxial films with carrier concentrations typically in the range n = 5-10 x 1015 cm-3 are routinely obtained. In some cases, values in the high 1014 cm-3 range have been reported. Advanced focal plane array structures for long wavelength applications will require material with n < 4 x 1014 cm-3. Judging from the present state of the art, this goal will likely be attained within the next few years.

Molecular beam epitaxy (MBE) is an ultrahigh vacuum evaporation process for growing epitaxial films on a wide variety of substrates. The basic constituents of the films are thermally evaporated and directed toward a heated substrate. The evaporated materials are deposited on the heated substrate surface forming a film. MBE offers the ability to maintain a high level of precise control over material composition and film thickness required for semiconductor devices utilized in microwave, millimeter wave and optical system applications.

Our model, presented earlier, which predicts the circumstances under which intrinsic mirrorless optical bistability (OB) can occur due to atomic pair correlation in a small volume, is outlined and the results presented. These results, which Predict a first-order phase transition in steady state for an externally-driven collection of a large number of atoms far removed from thermodynamic equilibriun, forms the motivation for a detailed microscopic examination of the dynamical behavior of atonic pair correlation in the presence of externally-applied coherent radiation. 4 model is presented and results are discussed for the transient dynamic evolution of two, two-level atoms separated from each other by a distance r in the presence of an externally-applied coherent radiation field. The results predict collective radiation reaction, frequency shifts, relaxation in terms of the atomic seoaration r (assumed much larger than single atom dimensions), the externally-applied field intensity and spacial uniformity of the field with respect to the inter-atomic volume.

A fiber optic pulse compression concept for processing wide bandwidth (>_1 GHz ) radar signals is discussed. This concept is based on the correlation process. It has the potential of achieving a range resolution greater than 15 cm (0.5 feet), a correlation rate greater than 1 GHZ, and a compression ratio greater than 100.

The first application of nonlinear integrated optics to signal processing is described. The nonlinear mixing of two oppositely propagating waves guided in a titanium in-diffused lithium niobate waveguide has been demonstrated to produce the real-time convolution of two pulses of picosecond duration.

We have observed periodic oscillations and optical turbulence in hybrid optical bistable systems having a delay in the feedback, as predicted by Ikeda et al. The period-two output is essentially a square wave of period equal to twice the feedback delay time. Most of the measurements in our hybrid system have been made with a detector-amplifier-modulator response time T of 0.8 ms, much less than the 36 ms computer-generated delay time tR, as required for Ikeda instabilities. Period-two oscillations have also been seen with an optical fiber providing a tR of 6 ps. These hybrid systems have enabled us to study the path to chaos as the input intensity or feedback gain is increased. In all-optical bi-stable devices, such as semiconductor etalons, the feedback time is the cavity round-trio time, which can be made very short (approximately picoseconds), so that many-gigahertz all-optical oscillators can be contemplated. However, such oscillations also require that the medium response time be shorter than the delay time, so realization of high-frequency optical oscillators must await the discovery of high-speed bistable optical devices. In the meantime, use of fast nonresonant nonlinearities in guided-wave configurations could lead to gigahertz optical oscillators.

The reflection of light at the interface between linear and nonlinear media can provide fundamentally novel nonlinear effects such as nonlinear switching from total internal reflection to partial transmission, bleaching of the interface, and bistability. The nonlinear interface is the simplest switching and bistable optical device. Unlike bistable Fabry-Perot resonators, it allows one to use broadband sources of light and remove resonant restrictions on frequency tuning, and offers potentials to attain high operating speed. Experimental demonstration of those effects shows good agreement with some of the predictions of plane-wave theory. Some of the experimental results as well as computer simulation, however, show a new feature of the phenomenon which requires further exploration.

This paper discusses the development of millimeter wave dielectric image guide integrated circuit comuonents and their application in communications and radar systems. It describes specific systems such as a 60/70 GHz communication set, a 70 GHz binocular radio, a pulsed radar, a FN-CW radar using a self-oscillating mixer and a FSK radar transceiver, all at 94 GHz, to demonstrate the feasibility of dielectric waveguide type components in practical systems applications.

An investigation into the multispectral radiation detection of small changes in target emissivity has been performed by Georgia Tech. A series of ice detection measurements on the shuttle external tank (ET) were performed using an advanced instrumentation radiometer operating at 35/95 GHz. Actual shuttle ET ice detection measurements were run at NASA's National Space Technology Laboratory (NSTL) during cryogenic fueling operations prior to orbiter engine firing tests. Investigations revealed that ET icing caused an increase in surface brightness temperature and the test results further demonstrated the usefulness of millimeter wave radiometry for the detection of ice on the ET.

Material requirements for various microwave and millimeter wavelength solid state devices are discussed and the applicability of molecular beam exitaxy to growth of the epitaxial layers is presented. The complex doping profiles required for these devices suggest the precise control of epitaxial film thickness, impurity concentration, uniformity, interfaces, alloy composition and surface quality achievable with MBE.

This paper reports on the demonstration of a new solid state oscillator principle based upon the real space transfer (RST) of electrons from a high mobility GaAs layer to a low mobility A1GaAs layer in a GaAs/AlGaAs heterostructure. The RST of electrons is achieved by applying a DC bias plus the AC field parallel to the layered interface of the heterostructure to periodically heat and cool the electrons. When the electric field increases, the current decreases and a negative differential resistance effect is realized. The transit time in the oscillator is associated with electron motion across the thin (100-1000 YR) heterostructure layers and not with the electron motion between voltage contacts. A theory of the oscillator predicts it should be capable of generating frequencies well beyond 100 GHz. The power output of the oscillator depends on the number of pairs of GaAs/A1GaAs layers. Since the number of pairs can be made quite large without increasing capacity effects, the total power promises to be substantial.

Increased interest in the millimeter and submillimeter wavelength regions during the past decade has stimulated the development of sensitive receivers for a wide range of applications. The extension of waveguide mixers into the submillimeter region and the development of various types of quasi-optical receivers are reviewed. The development of novel GaAs integrated circuit mixers for the millimeter and submillimeter regions is discussed. Receiver performance is reviewed and the potential impact of monolithic receiver technology on systems applications is considered.

Integrated optics and millimeter and microwave circuit technology has potential of providing the Army with precision guided munitions equipment that is more survivable, affordable, and transportable, and the opportunities for these improvements include close combat, air defense, and indirect fire weapons. Successful achievement of objectives for these applications is contingent on a strong supporting research program in electronic materials, and early identification of producibility problems for solution under the manufacturing methods and technology program. Manufacturing methods analyses have shown that this technology has the potential for reducing the fabrication costs of selected subsystems by eliminating some of the labor - intensive steps in the processes. Several pivotal subsystems have been identified for research and development efforts. Integrated optics and millimeter and microwave circuits is one of several emerging technologies that will provide the Army with self-contained munitions with a high degree of automatic operation for operation on the extended battlefield.

The most important process in the development of weapons technology is the formulation of weapon systems concepts that satisfy the requirements and needs of the user and thus elicit his active support. The process of concept formulation is sketched.

Optical Command and Beamrider activities at Redstone Arsenal are described. Historical results including actual flight tests, along with present effort and future plans are described. Several iterations of early development hardware are shown and discussed. Potential system applications and opportunities for integrated optics/large scale integrated circuit application are explored.

Fire support weapons (Artillery) have been one of the most important elements of 20th Century warfare. It is the purpose of this paper to provide, in summary fashion, a definition of the fire support role, some of the targets which these systems must face, the current and prospective family of missiles which are/maybe assigned to this role and the areas of need where technology may enhance future system capability. In the context of the extended battlefield where the "central battle" may extend from the forward line of own troops (FLOT) to 50 KM or more beyond the FLOT, the importance of an effective indirect fire capability is greater than ever before. As the US continues to face an apparently insurmountable Soviet preponderance in every component of conventional combat power, it appears that advanced technology is the only conceivable force equalizer. To achieve the needed capability in the fire support area, we must realize the full potential from our acquisition, targeting and weapon systems. Integrated optics and millimeter and microwave integrated circuits offer potential to enhance fire support system capability in many areas. Several are pointed in this discussion.

The development of the Mission Area Analysis process by the Army to critically assess future needs has become instrumental in focusing technology in a timely manner on realistic problems. Despite the massive modernization the Army air defenses are experiencing, threat issues such as the attack helicopter and improved low altitude performance make the force sensitive to diverse attack plans. Technology opportunities in command, control and communications, weapon system performance and family survivability are identified and thrust areas are suggested.