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16 November 1982 Texas Instruments' Virtual Phase Charge-Coupled Device (CCD) Imager Operated In The Frontside Electron-Bombarded Mode
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Abstract
The Texas Instruments' Virtual Phase CCD imager has been successfully operated in the frontside electron-bombarded mode. The entire active area of the imager was covered with 130 nm of thermally grown gate oxide while only the clocked half of each pixel was addi-tionally covered with a 500 nm polysilicon electrode. No protective overcoat was grown over the imager. A 20 kV electron beam was focused onto the imager to a total dose in excess of 120,000 primary electrons per pixel. Both the parallel and serial clocks were operated between -15 V and +2 V throughout, and no adjustment in any of the operating parameters was required. However, flat band shifts on the order of 2 V were detected. Single primary electron events were clearly detected with a signal-to-noise ratio exceeding 10. In excess of 90% of the secondary charge generated by a primary event was collected in a single pixel. The standard virtual phase imager with only the protective overcoat deleted can be used with a photocathode in the electron-bombarded mode for observing low-to-moderate light levels and can act as a true photon counter.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Everett, Jaroslav Hynecek, Paul Zucchino, and John Lowrance "Texas Instruments' Virtual Phase Charge-Coupled Device (CCD) Imager Operated In The Frontside Electron-Bombarded Mode", Proc. SPIE 0331, Instrumentation in Astronomy IV, (16 November 1982); https://doi.org/10.1117/12.933450
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