Ion Beam Lithography System Using A High Brightness H2+ Ion Source

Benjamin M. Siegel; Gary R. Hanson; Miklos Szilagyi; David R. Thomas; Richard J. Blackwell; Hongyul Paik

doi:10.1117/12.933427

30 June 1982 Ion Beam Lithography System Using A High Brightness H₂⁺ Ion Source

Benjamin M. Siegel, Gary R. Hanson, Miklos Szilagyi, David R. Thomas, Richard J. Blackwell, Hongyul Paik

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933427
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

The characteristics of the ion source determine the writing soeed and resolution that can be realized in direct writing ion beam lithography with focussed ion orobes. We have developed an H₂+ ion source with very high brightness and low energy snread.1 Two ion beam lithography systems based on this source are being develoned. CAD has been used to design two ion optical-deflector systems to focus this source to high resolution, high current density Probes. The desicn narameters are calculated to produce ion probes 10 to 50 nm in diameter with current densities 100 amn/cm2. The systems will be use 1. to investigate and a' my ion beam lithogranhy: ion-resist interactions, resist eNnosure and develonment characteristics, resolution limits, ion beam structuring of devices, etc.

Citation Download Citation

Benjamin M. Siegel, Gary R. Hanson, Miklos Szilagyi, David R. Thomas, Richard J. Blackwell, and Hongyul Paik "Ion Beam Lithography System Using A High Brightness H₂⁺ Ion Source", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933427

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