Ion-Channelling Effects In Scanning Microscopy And Ion Beam Writing With A 60 keV Ga+ Probe

R. Levi-Setti; T. R. Fox; K. Lam

doi:10.1117/12.933428

30 June 1982 Ion-Channelling Effects In Scanning Microscopy And Ion Beam Writing With A 60 keV Ga⁺ Probe

R. Levi-Setti, T. R. Fox, K. Lam

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933428
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

We describe the operation and functions of a scanning ion microscope. This has been shown capable of detecting ion-channelling phenomena in crystalline materials through the observation of crystallographic contrast in images obtained with the secondary electron and secondary ion signal. The instrument also provides on-line quantitative information on surface amorphization and on channelling effects in direct ion beam writing.

Citation Download Citation

R. Levi-Setti, T. R. Fox, and K. Lam "Ion-Channelling Effects In Scanning Microscopy And Ion Beam Writing With A 60 keV Ga⁺ Probe", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933428

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