Resist Possibilities And Limitations In Ion Beam Lithography

A. Macrander; D. Barr; A. Wagner

doi:10.1117/12.933426

30 June 1982 Resist Possibilities And Limitations In Ion Beam Lithography

A. Macrander, D. Barr, A. Wagner

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933426
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

A broad range of materials and processing techniques amenable to producing resist systems for ion beam lithography are discussed. The effect of random fluctuations in exposure dose on feature size for a gaussian beam of constant shape is calculated. The results of Monte Carlo simulations of exposures of PMMA on silicon by 50 KeV H₂+, 100 KeV and and 150 KeV Li⁺ ions are presented and it is shown that feature resolution is fundamentally limited by the physical processes through which energy is deposited.

Citation Download Citation

A. Macrander, D. Barr, and A. Wagner "Resist Possibilities And Limitations In Ion Beam Lithography", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933426

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