Paper
15 October 1982 Double Film Thickness Measurements In The Semiconductor Industry
Richard F. Spanier
Author Affiliations +
Proceedings Volume 0342, Integrated Circuit Metrology I; (1982) https://doi.org/10.1117/12.933687
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
Ellipsometry as a technique for the measurement of the optical constants (n,k,d) of two layer films on substrates is presented in a tutorial fashion. The ideal two layer film model is described and departures from ideality that are likely to be encounterd in a real sample are discussed. The ellipsometric measurement of the change in polarization state upon reflection as well as the determination of the optical reflection angles DELTA and PSI are reviewed. Extraction of the optical constants from the DELTA, PSI measurement is discussed at length. Examples are drawn from double film systems of interest to the semi-conductor industry but the principles and procedures of analysis illustrated by these examples have general application.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard F. Spanier "Double Film Thickness Measurements In The Semiconductor Industry", Proc. SPIE 0342, Integrated Circuit Metrology I, (15 October 1982); https://doi.org/10.1117/12.933687
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Refractive index

Reflection

Silicon films

Silicon

Oxides

Ellipsometry

Polarization

RELATED CONTENT


Back to Top