Microstructure In A-Gaas:H Alloys And Its Correlation With The Electronic Properties

D. K. Paul; J. Blake; G. Moddel; William Paul

doi:10.1117/12.933797

15 September 1982 Microstructure In A-GaAs:H Alloys And Its Correlation With The Electronic Properties

D. K. Paul, J. Blake, G. Moddel, William Paul

Proceedings Volume 0346, Thin Film Technologies and Special Applications; (1982) https://doi.org/10.1117/12.933797
Event: 1982 Technical Symposium East, 1982, Arlington, United States

Abstract

Hydrogenated alloys of a-GaAs have been prepared by r.f. sputtering in a mixture of argon and hydrogen at several partial pressures, substrate temperatures and r.f. powers. We report the results of a systematic investigation of the microstructural properties of these films by SEM and TEM, and attempt a correlation with the deposition parameters and other electronic properties.

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D. K. Paul, J. Blake, G. Moddel, and William Paul "Microstructure In A-GaAs:H Alloys And Its Correlation With The Electronic Properties", Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); https://doi.org/10.1117/12.933797

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