A Lithography System For X-Ray Process Development

W. Thomas Novak

doi:10.1117/12.935101

7 November 1983 A Lithography System For X-Ray Process Development

W. Thomas Novak

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935101
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

An x-ray system usable for process development and pilot line production is described, which utilizes technology based on a fixed palladium anode source. The alignment system employs three microscope objectives and optical channels to view the appropriate alignment target. The optical system has been optimized for use with circular fresnel zone plate targets. Alignment is electronically assisted using a detection system and associated electronics. The wafer stage is piezo motor driven with 6 degrees of freedom capable of placing the wafer under the mask within the allowable tolerance. The stage design incorporates a combination of flexures and air bearings to achieve the required precision. Essential features of the source, stage and alignment subsystems are described.

Citation Download Citation

W. Thomas Novak "A Lithography System For X-Ray Process Development", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935101

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