Photoexcited Carrier Lifetime And Auger Recombination In 1.3 Micron Bandgap InGaAsP

J. P. Heritage; B. Sermage; O. E. Martinez

doi:10.1117/12.966066

28 November 1983 Photoexcited Carrier Lifetime And Auger Recombination In 1.3 Micron Bandgap InGaAsP

J. P. Heritage, B. Sermage, O. E. Martinez

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966066
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Time-resolved measurements of the decay of photoexcited carriers in InGaAsP revea1 the presence of Auger recombination at carrier concentrations near and above 3x10¹⁸ cm^-3. Our results suggest that while Auger recombination does contribute to the temperature dependence of the InGaAsP-1.3μm laser, it may not alone fully account for poorer room temperature dependence of InGaAsP-InP compared to GaAs-GaA1As lasers.

Citation Download Citation

J. P. Heritage, B. Sermage, and O. E. Martinez "Photoexcited Carrier Lifetime And Auger Recombination In 1.3 Micron Bandgap InGaAsP", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966066

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available