Picosecond Optical Control Of Transferred Electron Devices

T. F. Carruthers

doi:10.1117/12.966070

28 November 1983 Picosecond Optical Control Of Transferred Electron Devices

T. F. Carruthers

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966070
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Examples of the use of picosecond optical pulses both as diagnostic probes and as triggering signals for transferred electron devices (TEDs) are given. The internal electric field distribution in a planar InP TED was measured with the spatial resolution of the focused beam of pulses. Domain formation in response to a triggering bias pulse is shown to require a minimum pulse duration; the bias dependence of this duration was measured for a gated GaAs TED.

Citation Download Citation

T. F. Carruthers "Picosecond Optical Control Of Transferred Electron Devices", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966070

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