Ultrahigh Speed Photodetectors

S. Y. Wang; D. M. Bloom; D. M. Collins

doi:10.1117/12.966093

28 November 1983 Ultrahigh Speed Photodetectors

S. Y. Wang, D. M. Bloom, D. M. Collins

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966093
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Ultrahigh speed photodiodes with -3dB frequency roll-off in excess of 100 GHz or equivalently in the time domain an impulse response with a full width half maximum (FWHM) of 5.4 psec have been developed and characterzed. These 100 GHz photodiodes have a planar configuration fabricated on n on n⁺ GaAs expitaxial layers on semi-insulating GaAs substrates which together with proton bombardment, have kept parasitic capacitances to ≤15 femto farads. The planar structure photodiode also lends itself easily to monolighic integration with a MESFET. The device operates at a reverse bias of -4 volts.

Citation Download Citation

S. Y. Wang, D. M. Bloom, and D. M. Collins "Ultrahigh Speed Photodetectors", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966093

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