Raman Study Of Strain And Microadhesion In Silicon

J. Gonzalez-Hernandez; Denis Martin; Raphael Tsu

doi:10.1117/12.939288

10 May 1984 Raman Study Of Strain And Microadhesion In Silicon

J. Gonzalez-Hernandez, Denis Martin, Raphael Tsu

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939288
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

By measuring the Raman frequency shift due to a two-dimensional stress induced in silicon thin films in various substrates having thermal expansion coefficients above and below that of silicon, we have characterize the strength of bond between the silicon film and the substrate. Therefore our approach offers a quantitative measure of microadhesion.

Citation Download Citation

J. Gonzalez-Hernandez, Denis Martin, and Raphael Tsu "Raman Study Of Strain And Microadhesion In Silicon", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939288

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