Contrast Enhanced UV Lithography With Polysilanes

Donald C. Hofer; Robert D. Miller; C.Grant Willson; Andrew R. Neureuther

doi:10.1117/12.941784

21 May 1984 Contrast Enhanced UV Lithography With Polysilanes

Donald C. Hofer, Robert D. Miller, C.Grant Willson, Andrew R. Neureuther

Proceedings Volume 0469, Advances in Resist Technology I; (1984) https://doi.org/10.1117/12.941784
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Contrast enhanced lithography has been been applied to mid-uv projection lithography with a new class of CEL materials, polysilanes. The nonlinear bleaching photochemistry of polysilanes provides a unique "bleaching latency" for contrast enhanced lithography. SAMPLE resist exposure and development simulation is compared with experimental CEL resist images using AZ2400® photoresist. The contrast enhancement gained with the use of polysilanes is examined as a function of exposure dose, image size, and contrast enhancement film thickness.

Citation Download Citation

Donald C. Hofer, Robert D. Miller, C.Grant Willson, and Andrew R. Neureuther "Contrast Enhanced UV Lithography With Polysilanes", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941784

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