Paper
21 May 1984 Novel, Negative-Working Electron-Beam Resist
Z. C.H Tan, R. C. Daly, S. S. Georgia
Author Affiliations +
Abstract
Previous work showed a poly(allyl methacrylate)-co-(2-hydroxyethyl methacrylate) copolymer to be a high-sensitivity, high-resolution, high-temperature-resistant negative-working electron-beam and x-ray resist. Although such a resist has been particularly use-ful, sensitivity to environmental conditions has been observed on occasion. For example, intermittent image-edge scaling and/or gross scumming have been encountered. Two approaches were considered to minimize the occurrence of these problems: proper handling and processing of the resist and a major change in the chemical structure of the copolymer. As part of the second approach, a novel copolymer was synthesized and evaluated as a negative electron-beam resist. This material is relatively free from the image-edge scaling and the gross scumming noted above. It provides high sensitivity, submicrometer resolution, and adequate plasma-etch resistance, and the development and exposure lati-tudes of the resist are very good. After postbaking at 170°C, the resist shows good resistance to both chemical and dry etching processes.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. C.H Tan, R. C. Daly, and S. S. Georgia "Novel, Negative-Working Electron-Beam Resist", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941787
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CITATIONS
Cited by 3 scholarly publications and 2 patents.
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KEYWORDS
Polymers

Plasma etching

Etching

Resistance

Environmental sensing

Plasma

Photoresist processing

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