Masked Ion Beam Lithography Using Stencil Masks

J. N Randall; D C Flanders; N P Economou

doi:10.1117/12.942319

18 June 1984 Masked Ion Beam Lithography Using Stencil Masks

J. N Randall, D C Flanders, N P Economou

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942319
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Masked ion beam lithography has the potential to become a high resolution proximity printing technique which is capable of short exposure times. When used for proximity printing, the resolution of masked ion beam lithography is limited by the interaction of the transmitted ions with the ion beam mask. A straightforward approach to eliminating the mask induced scattering is to use a stencil mask where the transmission areas are simply holes in the mask. We have been developing an exposure process that uses a grid support mask which replaces completely open areas with a fine grid. The image of the grid can be eliminated by rocking the incident angle of the beam. We will discuss a fabrication procedure for such a mask as well as investigations into its uses and limitations.

Citation Download Citation

J. N Randall, D C Flanders, and N P Economou "Masked Ion Beam Lithography Using Stencil Masks", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942319

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