Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification

N. M. Johnson

doi:10.1117/12.946317

28 June 1985 Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification

N. M. Johnson

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946317
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

This paper presents an overview of the application of deep level transient spectroscopy (DLTS) for the characterization and identification of electronic defects in semiconductors. The range of defect problems that has been studied by DLTS is illustrated with results from crystalline semiconductors, semiconductor - insulator interfaces, and amorphous semiconductors,

Citation Download Citation

N. M. Johnson "Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946317

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