Growth Of Quality Cd[sub]x[/sub]Hg[sub]1-x[/sub]Te Crystals For Infrared Devices By The Travelling Heater Method (THM)

A. Durand; J. L. Dessus; T. Nguyen Duy

doi:10.1117/12.951203

9 July 1986 Growth Of Quality Cd_xHg_1-xTe Crystals For Infrared Devices By The Travelling Heater Method (THM)

A. Durand, J. L. Dessus, T. Nguyen Duy

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951203
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The Travelling Heater Method has been applied to the crystal growth of CdxHgl-xTe for infrared applications. The main characteristics and advantages of this method are presented with regard to the two most important metallurgical difficulties of CdxHgl-xTe : mercury pressure and phase segregation. Metallurgical and electrical properties of the ingots are presented.

Citation Download Citation

A. Durand, J. L. Dessus, and T. Nguyen Duy "Growth Of Quality Cd_xHg_1-xTe Crystals For Infrared Devices By The Travelling Heater Method (THM)", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951203

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