III-V Semiconductor Waveguides And Phase-Modulators : The Localized Vapor Phase Epitaxy Approach

M. Erman; N. Vodjdani; P. Jarry; P. Stephan; J. L. Gentner; C. Guedon

doi:10.1117/12.938132

3 November 1986 III-V Semiconductor Waveguides And Phase-Modulators : The Localized Vapor Phase Epitaxy Approach

M. Erman, N. Vodjdani, P. Jarry, P. Stephan, J. L. Gentner, C. Guedon

Proceedings Volume 0651, Integrated Optical Circuit Engineering III; (1986) https://doi.org/10.1117/12.938132
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

The vapor phase epitaxy has been used to realize a number of new GaAs and InP waveguide structures. Among them, the inverted rib structure has been used in order to fabricate GaAs homojunction phase modulators. The structures have been analyzed with two-dimensional numerical methods, allowing for an accurate modelling and optimization of the device. The potentialities of similar heterojunction phase modulators for both the GaAs and InP systems are discussed.

Citation Download Citation

M. Erman, N. Vodjdani, P. Jarry, P. Stephan, J. L. Gentner, and C. Guedon "III-V Semiconductor Waveguides And Phase-Modulators : The Localized Vapor Phase Epitaxy Approach", Proc. SPIE 0651, Integrated Optical Circuit Engineering III, (3 November 1986); https://doi.org/10.1117/12.938132

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