Preparation And Characterization Of ZnSiP[sub]2[/sub], ZnGeP[sub]2[/sub] and ZnGeP[sub]1.8[/sub]As[sub].2[/sub] Single Crystals

He-Sheng Shen; Guang-Qing Yao; Robert Kershaw; Kirby Dwight; Aaron Wold

doi:10.1117/12.936426

19 December 1986 Preparation And Characterization Of ZnSiP₂, ZnGeP₂ and ZnGeP_1.8As_.2 Single Crystals

He-Sheng Shen, Guang-Qing Yao, Robert Kershaw, Kirby Dwight, Aaron Wold

Proceedings Volume 0683, Infrared and Optical Transmitting Materials; (1986) https://doi.org/10.1117/12.936426
Event: 30th Annual Technical Symposium, 1986, San Diego, United States

Abstract

Single crystals of ZnSiP2, ZnGeP2 and ZnGeP1.8As.2 have been grown by several techniques and their electronic and optical properties compared. For ZnSiP2 there are marked absorption bands at 10 and 11.5 μm, and at 13 μm for ZnGeP2. Upon substitution of 10 mole percent of arsenic for phosphorus , the latter band is red-shifted by 0.3 μm. This composition represents the limit of substitution of arsenic for phosphorus in this structure.

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He-Sheng Shen, Guang-Qing Yao, Robert Kershaw, Kirby Dwight, and Aaron Wold "Preparation And Characterization Of ZnSiP₂, ZnGeP₂ and ZnGeP_1.8As_.2 Single Crystals", Proc. SPIE 0683, Infrared and Optical Transmitting Materials, (19 December 1986); https://doi.org/10.1117/12.936426

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