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9 April 1987 Capability Of Kinetic Ellipsometry As An In Situ Control System For Ultra Thin Layers Stacks Growth: Application To The Realization Of Performant Soft X Ray Optics
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Abstract
Diode RF sputtering technique has been used to produce carbon tungsten ultra thin layers stacks for application in the soft X-ray donain as optical system. In situ kinetic ellipsometry has been chooser to control the multilayers growth with a great accuracy. Grazing X-ray reflection (1.54 Å), absolute soft X-ray reflectivity (44.7 Å) and electron microscopy results confirm a posteriori the ellipsometry capabili-ties. The stacks have low roughness (2 Å) and low periodicity errors (2 %), 13 % experimental reflectivity instead of 20 % theoretical (2 d = 90 Å) and 7 % instead of 12 % (2 d = 60 Å) have been obtained.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Houdy, V. Bodart, L. Nevot, D. Corno, B. Pardo, M. Arbaoui, N. Alehyane, R. Barchewitz, Y. Lepetre, and E. Ziegler "Capability Of Kinetic Ellipsometry As An In Situ Control System For Ultra Thin Layers Stacks Growth: Application To The Realization Of Performant Soft X Ray Optics", Proc. SPIE 0688, Multilayer Structures & Laboratory X-Ray Laser Research, (9 April 1987); https://doi.org/10.1117/12.964832
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