Multilayers for X-Ray Optics: Production by Diode Sputtering and Characterization by Microcleavage Transmission Electron Microscopy

E. Ziegler; Y. Lepetre; G. Fenske

doi:10.1117/12.964843

9 April 1987 Multilayers for X-Ray Optics: Production by Diode Sputtering and Characterization by Microcleavage Transmission Electron Microscopy

E. Ziegler, Y. Lepetre, G. Fenske

Author Affiliations +

Proceedings Volume 0688, Multilayer Structures & Laboratory X-Ray Laser Research; (1987) https://doi.org/10.1117/12.964843
Event: 30th Annual Technical Symposium, 1986, San Diego, United States

Abstract

A multilayer with 99 bi-layers and a 2.5 nm period made of carbon and tungsten has been produced as a test sample for a diode sputtering apparatus and process. The process included Microcleavage Transmission Electron Microscopy as a rapid characterization method.

Citation Download Citation

E. Ziegler, Y. Lepetre, and G. Fenske "Multilayers for X-Ray Optics: Production by Diode Sputtering and Characterization by Microcleavage Transmission Electron Microscopy", Proc. SPIE 0688, Multilayer Structures & Laboratory X-Ray Laser Research, (9 April 1987); https://doi.org/10.1117/12.964843

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