Paper
10 March 1987 Near Cutoff Propagation In Low Loss Optical Waveguides Formed On Si02/Si Substrate
David E. Zelmon, William C. Borland, Howard E. Jackson, Joseph T. Boyd
Author Affiliations +
Proceedings Volume 0704, Integrated Optical Circuit Engineering IV; (1987) https://doi.org/10.1117/12.937155
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
Mode properties of four-layer planar optical waveguides consisting of a waveguiding layer bounded above by free space and formed on a silicon dioxide isolation cladding layer which in turn is formed on a thick silicon substrate are considered. Perturbation approaches are shown to be accurate except near mode cutoff where a numerical solution of the four-layer equations is required. Numerical calculations of waveguide attenuation due to substrate coupling for thermally-nitrided silicon dioxide waveguides are presented for a variety of layer thicknesses, layer material compositions, and wavelengths. Comparison with experimental data is included.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David E. Zelmon, William C. Borland, Howard E. Jackson, and Joseph T. Boyd "Near Cutoff Propagation In Low Loss Optical Waveguides Formed On Si02/Si Substrate", Proc. SPIE 0704, Integrated Optical Circuit Engineering IV, (10 March 1987); https://doi.org/10.1117/12.937155
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KEYWORDS
Waveguides

Refractive index

Silicon

Signal attenuation

Cladding

Wave propagation

Silica

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