Oxygen Reactive Ion Etching For Multilevel Lithography

Mark A. Hartney; Wayne M. Greene; Dennis W. Hess; David S. Soong

doi:10.1117/12.940343

25 August 1987 Oxygen Reactive Ion Etching For Multilevel Lithography

Mark A. Hartney, Wayne M. Greene, Dennis W. Hess, David S. Soong

Proceedings Volume 0771, Advances in Resist Technology and Processing IV; (1987) https://doi.org/10.1117/12.940343
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

Oxygen plasmas used for pattern transfer in multilevel lithography have been characterized over a range of plasma parameters such as power and pressure. Etch rates of silicon dioxide and representative silicon-containing and planarizing polymers are correlated with these plasma parameters. Plasma diagnostic measurements include DC self-bias voltage, ion flux and incident ion energy distributions. Measurement of ion energy distributions yields fundamental information about the etching process since Si0₂sputter rates and oxygen ion implant depths are strong functions of ion energy.

Citation Download Citation

Mark A. Hartney, Wayne M. Greene, Dennis W. Hess, and David S. Soong "Oxygen Reactive Ion Etching For Multilevel Lithography", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940343

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