Plasma Etch Characterization Using Electrical Iinewidth Measuring Techniques

Roger Patrick; Beth Arden

doi:10.1117/12.940430

17 April 1987 Plasma Etch Characterization Using Electrical Iinewidth Measuring Techniques

Roger Patrick, Beth Arden

Proceedings Volume 0775, Integrated Circuit Metrology, Inspection, & Process Control; (1987) https://doi.org/10.1117/12.940430
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The results of varying dry polysilicon etch process parameters are presented. Techniques used to study and interpret the results are electrical linewidth measurement and thin film thickness measurement. Conclusions are drawn about the suitability of the process for specific design rule considerations, and the tolerance of the parameters involved.

Citation Download Citation

Roger Patrick and Beth Arden "Plasma Etch Characterization Using Electrical Iinewidth Measuring Techniques", Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); https://doi.org/10.1117/12.940430

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