Acceptor Impurity States And Their Consequences For Optical Properties Of GaAs Doping Superlattices

John D. Bruno; P. Paul Ruden

doi:10.1117/12.940820

11 August 1987 Acceptor Impurity States And Their Consequences For Optical Properties Of GaAs Doping Superlattices

John D. Bruno, P. Paul Ruden

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940820
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

In this paper, we examine two features of acceptor states in GaAs doping superlattices. First, we consider how the finite size of acceptor state wavefunctions affects optical matrix elements and below-gap luminescence spectra. Next, we examine the finite width of the acceptor band caused by potential fluctuations associated with the random configuration of charged impurities in the system and discuss the impact of this width on luminescence.

Citation Download Citation

John D. Bruno and P. Paul Ruden "Acceptor Impurity States And Their Consequences For Optical Properties Of GaAs Doping Superlattices", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940820

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