Silicon-Germanium Superlattices

G. Abstreiter; H. Brugger; K. Eberl; R. Zachai

doi:10.1117/12.940823

11 August 1987 Silicon-Germanium Superlattices

G. Abstreiter, H. Brugger, K. Eberl, R. Zachai

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940823
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Growth and properties of Si/Ge and Si/SixGe1-x strained layer superlattices are reviewed. The critical thickness of single layers and asymmetrically strained superlattices are determined by LEED and Raman spectroscopy. The importance of strain symmetrization is discussed. Built-in strains are determined by phonon Raman scattering. The effects of strain on the band structure are analysed theoretically. Transport measurements in selectively doped samples lead, in connection with self-consistent subband calculations, to a consistent picture of band ordering. In short period superlattices a quasi-direct band gap semiconductor can be achieved. Zone-folding effects are also observed in the phonon properties of such superlattices. They are discussed both for the acoustical and optical branches.

Citation Download Citation

G. Abstreiter, H. Brugger, K. Eberl, and R. Zachai "Silicon-Germanium Superlattices", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940823

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