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11 August 1987 Silicon-Germanium Superlattices
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987)
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Growth and properties of Si/Ge and Si/SixGe1-x strained layer superlattices are reviewed. The critical thickness of single layers and asymmetrically strained superlattices are determined by LEED and Raman spectroscopy. The importance of strain symmetrization is discussed. Built-in strains are determined by phonon Raman scattering. The effects of strain on the band structure are analysed theoretically. Transport measurements in selectively doped samples lead, in connection with self-consistent subband calculations, to a consistent picture of band ordering. In short period superlattices a quasi-direct band gap semiconductor can be achieved. Zone-folding effects are also observed in the phonon properties of such superlattices. They are discussed both for the acoustical and optical branches.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Abstreiter, H. Brugger, K. Eberl, and R. Zachai "Silicon-Germanium Superlattices", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987);

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