An Overview Of Optical Characterization Of Semiconductor Structures And Alloys

K. K. Bajaj; D. C. Reynolds

doi:10.1117/12.940884

22 April 1987 An Overview Of Optical Characterization Of Semiconductor Structures And Alloys

K. K. Bajaj, D. C. Reynolds

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940884
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Application of high resolution photoluminescence and absorption spectroscopies to characterize the semiconductor quantum well structures and alloys is reviewed. In particular, two main topics are discussed. First, the dependence of the width of the excitonic transitions in semiconductor alloys as a function of alloy composition is described. The dominant line broadening mechanism in these alloys arises from the statistical potential fluctuations caused by the components of the alloy. Second, the behavior of the width of the excitonic transitions in semiconductor quantum well structures as a function of the interface quality and the well size is discussed. A model of the relationship of the linewidth with the interface roughness is described. Recent calculations of the excitonic linewidths in semiconductor alloys and quantum well structures are briefly reviewed. Results of these calculations are compared with the available experiment data in GaAs/AlGaAs, InGaAs/InP and InGaAs/InAlAs systems. It is shown that the use of appropriate theoretical models in conjunction with the measurements of excitonic linewidths in these systems leads to a fairly reliable information concerning the microscopic structure of the interfaces and of the extent of the compositional disorder in constituent alloys.

Citation Download Citation

K. K. Bajaj and D. C. Reynolds "An Overview Of Optical Characterization Of Semiconductor Structures And Alloys", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940884

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