Optical Characterization Of Monocrystalline Silicon Carbide Thin Films

H. J. Kim; R. F. Davis

doi:10.1117/12.940912

22 April 1987 Optical Characterization Of Monocrystalline Silicon Carbide Thin Films

H. J. Kim, R. F. Davis

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940912
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

High-quality monocrystalline beta-SiC thin films were grown via two-step process of conversion of the Si(1002) surface by reaction with C2H4 and the subsequent chemical vapor deposition (CVD) at 1360 C and 1 atm total pressure. Four dopants, B and Al for p-type and N and P for n-type, were also incorporated into monocrystalline beta-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped beta-SiC thin films and to investigate the effects of dopants on the structure of the doped beta-SiC thin films. The changes in the shapes of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples. The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at 850cm71 respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.

Citation Download Citation

H. J. Kim and R. F. Davis "Optical Characterization Of Monocrystalline Silicon Carbide Thin Films", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940912

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