Photoluminescence And Stimulated Emission Of Highly Excited Gaas/A1Gaas Single Quantum Wells

S. Borenstain; D. Fekete; Arza Ron; E. Cohen

doi:10.1117/12.940894

22 April 1987 Photoluminescence And Stimulated Emission Of Highly Excited Gaas/A1Gaas Single Quantum Wells

S. Borenstain, D. Fekete, Arza Ron, E. Cohen

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940894
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

GaAs/A1xGa1-xAs single quantum wells (SQW)of width in the range of 20-40Å are probed by monitoring the luminescence and stimulated emission spectra under intense photoexcitation. The emission is due to the radiative recombination of an electron-hole plasma (EHP). Its density (n) and effective temperature (Teff) are obtained by model fitting the photoluminescence band shape. We find that in the ambient temperature range 4K-220K the carrier concentration is increasing with temperature from 10¹¹ to 10¹³cm^-2. The optical gain of the stimulated emission(SE)was measured by the variable stripe length method. A comparison with gain values measured in bulk GaAs under the same excitation conditions shows that the EHP in the SQW is about 20 times denser than in the bulk. The appearence of stimulated emission only at the lowest energy of the emission spectrum (where the unexcited crystal is transparent) means that only a fraction of the illuminated volume is filled by the EHP.

Citation Download Citation

S. Borenstain, D. Fekete, Arza Ron, and E. Cohen "Photoluminescence And Stimulated Emission Of Highly Excited Gaas/A1Gaas Single Quantum Wells", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940894

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