Raman Scattering Characterization Of Quantum Wells And Superlattices

Carl Colvard

doi:10.1117/12.940916

22 April 1987 Raman Scattering Characterization Of Quantum Wells And Superlattices

Carl Colvard

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940916
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Presented here is a brief review of the dominant features of quantum wells and superlattices that are seen in light scattering spectra, and how these can provide quantitative and qualitative information about the structures. These features include effects of acoustic phonon zone folding, optical phonon quantum levels, peak intensity variation due to interface disorder, scattering resonances at quantized electronic gaps, and peaks due to transitions between electronic levels in modulation doped structures. Quantitative information obtained includes layer periods, well widths, and electronic level energies. Some conclusions can also be made concerning structural disorder, interface broadening, and the amount of strain in lattice mismatched systems.

Citation Download Citation

Carl Colvard "Raman Scattering Characterization Of Quantum Wells And Superlattices", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940916

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