Raman Scattering From Semiconductor Thin Films

Howard E. Jackson; Joseph T. Boyd; Samhita Dasgupta; Hsindao E. Lu; Thomas D. Mantei

doi:10.1117/12.940909

22 April 1987 Raman Scattering From Semiconductor Thin Films

Howard E. Jackson, Joseph T. Boyd, Samhita Dasgupta, Hsindao E. Lu, Thomas D. Mantei

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940909
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The use of Raman spectroscopy to characterize thin silicon films formed by laser recrystallization using different capping layers, thin silicon films formed by plasma deposition, and thin films of tungsten silicide formed by rapid thermal annealing is reported.

Citation Download Citation

Howard E. Jackson, Joseph T. Boyd, Samhita Dasgupta, Hsindao E. Lu, and Thomas D. Mantei "Raman Scattering From Semiconductor Thin Films", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940909

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